A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Jiangbiao He; Ramin Katebi; Nathan Weise

doi:10.1109/TIE.2017.2708033

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Jiangbiao He, Ramin Katebi, Nathan Weise

Research output: Contribution to journal › Article › peer-review

56 Scopus citations

Abstract

Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.

Original language	English
Article number	7934004
Pages (from-to)	8344-8352
Number of pages	9
Journal	IEEE Transactions on Industrial Electronics
Volume	64
Issue number	10
DOIs	https://doi.org/10.1109/TIE.2017.2708033
State	Published - Oct 2017

Bibliographical note

Publisher Copyright:
© 1982-2012 IEEE.

Keywords

Current-dependent
hybrid switches
silicon carbide (SiC)
switching strategy
zero-voltage switching (ZVS)

ASJC Scopus subject areas

Control and Systems Engineering
Electrical and Electronic Engineering

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10.1109/TIE.2017.2708033

Cite this

@article{a1db54d0e98246faac6c8647b534c355,

title = "A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters",

abstract = "Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.",

keywords = "Current-dependent, hybrid switches, silicon carbide (SiC), switching strategy, zero-voltage switching (ZVS)",

author = "Jiangbiao He and Ramin Katebi and Nathan Weise",

note = "Publisher Copyright: {\textcopyright} 1982-2012 IEEE.",

year = "2017",

month = oct,

doi = "10.1109/TIE.2017.2708033",

language = "English",

volume = "64",

pages = "8344--8352",

number = "10",

}

TY - JOUR

T1 - A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

AU - He, Jiangbiao

AU - Katebi, Ramin

AU - Weise, Nathan

PY - 2017/10

Y1 - 2017/10

N2 - Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.

AB - Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.

KW - Current-dependent

KW - hybrid switches

KW - silicon carbide (SiC)

KW - switching strategy

KW - zero-voltage switching (ZVS)

UR - http://www.scopus.com/inward/record.url?scp=85029943617&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85029943617&partnerID=8YFLogxK

U2 - 10.1109/TIE.2017.2708033

DO - 10.1109/TIE.2017.2708033

M3 - Article

AN - SCOPUS:85029943617

VL - 64

SP - 8344

EP - 8352

IS - 10

M1 - 7934004

ER -

A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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