Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.
|Number of pages||9|
|Journal||IEEE Transactions on Industrial Electronics|
|State||Published - Oct 2017|
Bibliographical notePublisher Copyright:
© 1982-2012 IEEE.
- hybrid switches
- silicon carbide (SiC)
- switching strategy
- zero-voltage switching (ZVS)
ASJC Scopus subject areas
- Control and Systems Engineering
- Electrical and Electronic Engineering