A Current-Dependent Switching Strategy for Si/SiC Hybrid Switch-Based Power Converters

Jiangbiao He, Ramin Katebi, Nathan Weise

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


Hybrid switches configured by paralleling Silicon (Si) Insulated Gate Bipolar Transistors (IGBT) and Silicon Carbide (SiC) Metal-Oxide Semiconductor Field-Effect Transistors (MOSFET) have been verified to be a high-efficiency cost-effective device concept. In this paper, a current-dependent switching strategy is introduced and implemented to further improve the performance of Si/SiC hybrid switches. This proposed switching strategy is based on a comprehensive consideration of reducing device losses, reliable operation, and overload capability. Based on the utilization of such Si/SiC hybrid switches and the proposed switching strategy, a 15-kW single-phase H-bridge inverter prototype was implemented and tested in the laboratory. Simulation and experimental results are given to verify the performance of the hybrid switches and the new switching strategy.

Original languageEnglish
Article number7934004
Pages (from-to)8344-8352
Number of pages9
JournalIEEE Transactions on Industrial Electronics
Issue number10
StatePublished - Oct 2017

Bibliographical note

Publisher Copyright:
© 1982-2012 IEEE.


  • Current-dependent
  • hybrid switches
  • silicon carbide (SiC)
  • switching strategy
  • zero-voltage switching (ZVS)

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering


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