A Fast On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based T-Type Multilevel Inverters

Jiangbiao He; Nabeel A.O. Demerdash; Nathan Weise; Ramin Katebi

doi:10.1109/TIA.2016.2647720

A Fast On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based T-Type Multilevel Inverters

Jiangbiao He, Nabeel A.O. Demerdash, Nathan Weise, Ramin Katebi

Research output: Contribution to journal › Article › peer-review

87 Scopus citations

Abstract

On-line condition monitoring is of paramount importance for multilevel power converters used in safety-critical applications. A novel on-line nonintrusive diagnostic method for detecting open-circuit switch faults in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)-based T-type multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variations of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include faster detection speed and simpler implementation compared to other existing diagnostic methods in the literature. Moreover, this diagnostic method is immune to the disturbances of inverter's dc-bus voltage unbalance and load unbalance. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current; therefore, the implementation cost is low. Simulation and experimental results based on a lab-scale 20 kVA adjustable speed drive with a three-level SiC T-type inverter validate the effectiveness and robustness of this novel diagnostic method.

Original language	English
Article number	7805177
Pages (from-to)	2948-2958
Number of pages	11
Journal	IEEE Transactions on Industry Applications
Volume	53
Issue number	3
DOIs	https://doi.org/10.1109/TIA.2016.2647720
State	Published - May 1 2017

Bibliographical note

Publisher Copyright:
© 1972-2012 IEEE.

Funding

Manuscript received August 15, 2016; revised November 7, 2016; accepted December 1, 2016. Date of publication January 4, 2017; date of current version May 18, 2017. Paper 2016-IPCC-0506.R1, approved for publication in the IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS by the Industrial Power Converter Committee of the IEEE Industry Applications Society. This work was supported by the U.S. National Science Foundation under Grant NSF-GOALI #1028348.

Funders	Funder number
U.S. National Science Foundation (NSF)	NSF-GOALI #1028348

Keywords

Fault diagnosis
T-type multilevel inverter
neutral-point current
open-circuit switch faults
silicon carbide (SiC) metal-oxide-semi-conductor field-effect transistor (MOSFET)

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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10.1109/TIA.2016.2647720

Cite this

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title = "A Fast On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based T-Type Multilevel Inverters",

abstract = "On-line condition monitoring is of paramount importance for multilevel power converters used in safety-critical applications. A novel on-line nonintrusive diagnostic method for detecting open-circuit switch faults in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)-based T-type multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variations of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include faster detection speed and simpler implementation compared to other existing diagnostic methods in the literature. Moreover, this diagnostic method is immune to the disturbances of inverter's dc-bus voltage unbalance and load unbalance. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current; therefore, the implementation cost is low. Simulation and experimental results based on a lab-scale 20 kVA adjustable speed drive with a three-level SiC T-type inverter validate the effectiveness and robustness of this novel diagnostic method.",

keywords = "Fault diagnosis, T-type multilevel inverter, neutral-point current, open-circuit switch faults, silicon carbide (SiC) metal-oxide-semi-conductor field-effect transistor (MOSFET)",

author = "Jiangbiao He and Demerdash, {Nabeel A.O.} and Nathan Weise and Ramin Katebi",

note = "Publisher Copyright: {\textcopyright} 1972-2012 IEEE.",

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AU - Weise, Nathan

AU - Katebi, Ramin

PY - 2017/5/1

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N2 - On-line condition monitoring is of paramount importance for multilevel power converters used in safety-critical applications. A novel on-line nonintrusive diagnostic method for detecting open-circuit switch faults in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)-based T-type multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variations of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include faster detection speed and simpler implementation compared to other existing diagnostic methods in the literature. Moreover, this diagnostic method is immune to the disturbances of inverter's dc-bus voltage unbalance and load unbalance. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current; therefore, the implementation cost is low. Simulation and experimental results based on a lab-scale 20 kVA adjustable speed drive with a three-level SiC T-type inverter validate the effectiveness and robustness of this novel diagnostic method.

AB - On-line condition monitoring is of paramount importance for multilevel power converters used in safety-critical applications. A novel on-line nonintrusive diagnostic method for detecting open-circuit switch faults in silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs)-based T-type multilevel converters is introduced in this paper. The principle of this method is based on monitoring the abnormal variations of the dc-bus neutral-point current in combination with the existing information on instantaneous switching states and phase currents. Advantages of this method include faster detection speed and simpler implementation compared to other existing diagnostic methods in the literature. Moreover, this diagnostic method is immune to the disturbances of inverter's dc-bus voltage unbalance and load unbalance. In this method, only one additional current sensor is required for measuring the dc-bus neutral-point current; therefore, the implementation cost is low. Simulation and experimental results based on a lab-scale 20 kVA adjustable speed drive with a three-level SiC T-type inverter validate the effectiveness and robustness of this novel diagnostic method.

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A Fast On-Line Diagnostic Method for Open-Circuit Switch Faults in SiC-MOSFET-Based T-Type Multilevel Inverters

Abstract

Bibliographical note

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Keywords

ASJC Scopus subject areas

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