Abstract
Accurate measurements of the valence electronic structures of organic semiconductors are important for the development and understanding of organic electronic devices, materials, and interfaces. Ultraviolet photoelectron spectroscopy (UPS) is a well-established technique for probing valence electronic structures; however, many organic semiconductors undergo rapid sample degradation upon exposure to traditional laboratory-based vacuum ultraviolet (VUV) photon sources. Here, we report on a novel VUV photon source for UPS measurements that utilizes H Lyman-α emission with a narrow linewidth and a widely tunable intensity, and apply it to a number of organic materials of interest to show its ability to overcome this hurdle of sample degradation. Furthermore, the H Lyman-α source displays no measureable higher energy emission lines, which significantly reduces the background over typical He I discharge sources and allows for the onset of the density of states to be clearly observed over several orders of magnitude.
Original language | English |
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Pages (from-to) | 9-16 |
Number of pages | 8 |
Journal | Organic Electronics |
Volume | 41 |
DOIs | |
State | Published - Feb 1 2017 |
Bibliographical note
Publisher Copyright:© 2016 Elsevier B.V.
Keywords
- Electronic structure
- NPD
- Organic semiconductor
- P3HT
- Ultraviolet photoelectron spectroscopy
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering