A new physics effect, phonon-energy-coupling enhancement, and its applications for leakage current reduction of gate dielectrics

Zhi Chen, Jun Guo, Chandan B. Samantaray, Pangleen Ong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Since discovery of the phonon-energy coupling enhancement (PECE) effect, significant progress has been made in understanding of this new physics effect. Extensive evidence showed that all chemical bonds in SiO2/Si, including Si-D, Si-O, and Si-Si bonds are strengthened due to the PECE effect. To our great surprise, the quantum tunneling current of SiO2 is also reduced by 2-5 orders of magnitude. The key factors for generation of the PECE effect are the structure change at high temperature and repairing of defects by trace O2. There is a strong correlation between the leakage current reduction of high-k HfSiON and concentration of Si-O bonds suggesting that it is the PECE effect that causes the leakage current reduction of high-k oxides.

Original languageEnglish
Title of host publicationECS Transactions - Dielectrics for Nanosystems 3
Subtitle of host publicationMaterials Science, Processing, Reliability, and Manufacturing
Pages189-198
Number of pages10
Edition2
DOIs
StatePublished - 2008
Event3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting - Phoenix, AZ, United States
Duration: May 18 2008May 22 2008

Publication series

NameECS Transactions
Number2
Volume13
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

Conference3rd International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 213th ECS Meeting
Country/TerritoryUnited States
CityPhoenix, AZ
Period5/18/085/22/08

ASJC Scopus subject areas

  • General Engineering

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