TY - JOUR
T1 - A Novel Mitigation Mechanism for Photo-Induced Trapping in an Anthradithiophene Derivative Using Additives
AU - Nasrallah, Iyad
AU - Ravva, Mahesh Kumar
AU - Broch, Katharina
AU - Novak, Jiri
AU - Armitage, John
AU - Schweicher, Guillaume
AU - Sadhanala, Aditya
AU - Anthony, John E.
AU - Bredas, Jean Luc
AU - Sirringhaus, Henning
N1 - Publisher Copyright:
© 2020 Wiley-VCH GmbH
PY - 2020/9/1
Y1 - 2020/9/1
N2 - A novel trap mitigation mechanism using molecular additives, which relieves a characteristic early turn-on voltage in a high-mobility p-type acene-based small-molecule organic semiconductor, when processed from hydrous solvents, is reported. The early turn-on voltage is attributed to photo-induced trapping, and additive incorporation is found to be very effective in suppressing this effect. Remarkably, the molecular additive does not disturb the charge transport properties of the small-molecule semiconductor, but rather intercalates in the crystal structure. This novel technique allows for the solution-processing of small molecular semiconductors from hydrous solvents, greatly simplifying manufacturing processes for large-area electronics. Along with various electric and spectroscopic characterization techniques, simulations have given a deeper insight into the trap mitigation effect induced by the additive.
AB - A novel trap mitigation mechanism using molecular additives, which relieves a characteristic early turn-on voltage in a high-mobility p-type acene-based small-molecule organic semiconductor, when processed from hydrous solvents, is reported. The early turn-on voltage is attributed to photo-induced trapping, and additive incorporation is found to be very effective in suppressing this effect. Remarkably, the molecular additive does not disturb the charge transport properties of the small-molecule semiconductor, but rather intercalates in the crystal structure. This novel technique allows for the solution-processing of small molecular semiconductors from hydrous solvents, greatly simplifying manufacturing processes for large-area electronics. Along with various electric and spectroscopic characterization techniques, simulations have given a deeper insight into the trap mitigation effect induced by the additive.
KW - electron trapping
KW - light stability
KW - operational stability
KW - organic field-effect transistors
KW - organic semiconductors
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U2 - 10.1002/aelm.202000250
DO - 10.1002/aelm.202000250
M3 - Article
AN - SCOPUS:85089364481
SN - 2199-160X
VL - 6
JO - Advanced Electronic Materials
JF - Advanced Electronic Materials
IS - 9
M1 - 2000250
ER -