The giant deuterium isotope effect found previously for NMOS hot electron degradation is applied to study defect generation at the Si-SiO2 interface. The data suggest that interface defects related to hydrogen depassivation may be generated directly by channel hot electrons bombarding the interface without the necessity of injection into the oxide. This is in contrast to the standard teaching that energetic holes, created by impact ionization, and injected into the oxide are the main cause for hydrogen-related defect generation at the Si-SiO2 interfaces.
|Number of pages||3|
|Journal||IEEE Transactions on Electron Devices|
|State||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering