An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters

Tiefu Zhao; Jiangbiao He

doi:10.1109/APEC.2015.7104512

An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters

Tiefu Zhao, Jiangbiao He

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

49 Scopus citations

Abstract

In this paper, a new type of hybrid switching device with parallel connection of SiC and Si active switches, such as 'SiC JFET + Si IGBTs' or 'SiC MOSFET + Si IGBTs', is introduced and applied to a 250kW back-to-back Voltage Source Converter (VSC). Considering the different switching speeds and output characteristics of SiC and Si devices in such hybrid structure, a novel optimal switching pattern is proposed to enable the Zero Voltage Switching (ZVS) for Si IGBTs. This proposed switching pattern optimally utilizes the better conduction characteristics and lower switching loss of SiC devices based on the instantaneous load current values, therefore significantly reduces the semiconductor losses in comparison to conventional all-Si VSCs. Simulations of back-to-back converters with different hybrid devices namely, 'SiC JFET + Si IGBTs' and 'SiC MOSFET + Si IGBTs', are carried out in PLECS environment. Simulation results illustrate that the overall efficiency of back-to-back VSC can be improved by up to 4.8% if conventional Si devices are replaced with 'SiC+Si' hybrid devices with the proposed switching pattern.

Original language	English
Title of host publication	APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition
Pages	1276-1281
Number of pages	6
Edition	May
ISBN (Electronic)	9781479967353
DOIs	https://doi.org/10.1109/APEC.2015.7104512
State	Published - May 8 2015
Event	30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 - Charlotte, United States Duration: Mar 15 2015 → Mar 19 2015

Publication series

Name	Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC
Number	May
Volume	2015-May

Conference

Conference	30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015
Country/Territory	United States
City	Charlotte
Period	3/15/15 → 3/19/15

Bibliographical note

Publisher Copyright:
© 2015 IEEE.

Keywords

'SiC+Si' hybrid devices
High-efficiency power converters
Switching pattern
Zero-voltage switching

ASJC Scopus subject areas

Electrical and Electronic Engineering

Access to Document

10.1109/APEC.2015.7104512

Cite this

Zhao, T., & He, J. (2015). An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters. In APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition (May ed., pp. 1276-1281). Article 7104512 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2015-May, No. May). https://doi.org/10.1109/APEC.2015.7104512

@inproceedings{5ac7b9f632a74c178556cc81fa0d6dd5,

title = "An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters",

abstract = "In this paper, a new type of hybrid switching device with parallel connection of SiC and Si active switches, such as 'SiC JFET + Si IGBTs' or 'SiC MOSFET + Si IGBTs', is introduced and applied to a 250kW back-to-back Voltage Source Converter (VSC). Considering the different switching speeds and output characteristics of SiC and Si devices in such hybrid structure, a novel optimal switching pattern is proposed to enable the Zero Voltage Switching (ZVS) for Si IGBTs. This proposed switching pattern optimally utilizes the better conduction characteristics and lower switching loss of SiC devices based on the instantaneous load current values, therefore significantly reduces the semiconductor losses in comparison to conventional all-Si VSCs. Simulations of back-to-back converters with different hybrid devices namely, 'SiC JFET + Si IGBTs' and 'SiC MOSFET + Si IGBTs', are carried out in PLECS environment. Simulation results illustrate that the overall efficiency of back-to-back VSC can be improved by up to 4.8% if conventional Si devices are replaced with 'SiC+Si' hybrid devices with the proposed switching pattern.",

keywords = "'SiC+Si' hybrid devices, High-efficiency power converters, Switching pattern, Zero-voltage switching",

author = "Tiefu Zhao and Jiangbiao He",

note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015 ; Conference date: 15-03-2015 Through 19-03-2015",

year = "2015",

month = may,

day = "8",

doi = "10.1109/APEC.2015.7104512",

language = "English",

series = "Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC",

number = "May",

pages = "1276--1281",

booktitle = "APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition",

edition = "May",

}

Zhao, T & He, J 2015, An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters. in APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. May edn, 7104512, Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC, no. May, vol. 2015-May, pp. 1276-1281, 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015, Charlotte, United States, 3/15/15. https://doi.org/10.1109/APEC.2015.7104512

An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters. / Zhao, Tiefu; He, Jiangbiao.
APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition. May. ed. 2015. p. 1276-1281 7104512 (Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC; Vol. 2015-May, No. May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters

AU - Zhao, Tiefu

AU - He, Jiangbiao

PY - 2015/5/8

Y1 - 2015/5/8

N2 - In this paper, a new type of hybrid switching device with parallel connection of SiC and Si active switches, such as 'SiC JFET + Si IGBTs' or 'SiC MOSFET + Si IGBTs', is introduced and applied to a 250kW back-to-back Voltage Source Converter (VSC). Considering the different switching speeds and output characteristics of SiC and Si devices in such hybrid structure, a novel optimal switching pattern is proposed to enable the Zero Voltage Switching (ZVS) for Si IGBTs. This proposed switching pattern optimally utilizes the better conduction characteristics and lower switching loss of SiC devices based on the instantaneous load current values, therefore significantly reduces the semiconductor losses in comparison to conventional all-Si VSCs. Simulations of back-to-back converters with different hybrid devices namely, 'SiC JFET + Si IGBTs' and 'SiC MOSFET + Si IGBTs', are carried out in PLECS environment. Simulation results illustrate that the overall efficiency of back-to-back VSC can be improved by up to 4.8% if conventional Si devices are replaced with 'SiC+Si' hybrid devices with the proposed switching pattern.

AB - In this paper, a new type of hybrid switching device with parallel connection of SiC and Si active switches, such as 'SiC JFET + Si IGBTs' or 'SiC MOSFET + Si IGBTs', is introduced and applied to a 250kW back-to-back Voltage Source Converter (VSC). Considering the different switching speeds and output characteristics of SiC and Si devices in such hybrid structure, a novel optimal switching pattern is proposed to enable the Zero Voltage Switching (ZVS) for Si IGBTs. This proposed switching pattern optimally utilizes the better conduction characteristics and lower switching loss of SiC devices based on the instantaneous load current values, therefore significantly reduces the semiconductor losses in comparison to conventional all-Si VSCs. Simulations of back-to-back converters with different hybrid devices namely, 'SiC JFET + Si IGBTs' and 'SiC MOSFET + Si IGBTs', are carried out in PLECS environment. Simulation results illustrate that the overall efficiency of back-to-back VSC can be improved by up to 4.8% if conventional Si devices are replaced with 'SiC+Si' hybrid devices with the proposed switching pattern.

KW - 'SiC+Si' hybrid devices

KW - High-efficiency power converters

KW - Switching pattern

KW - Zero-voltage switching

UR - http://www.scopus.com/inward/record.url?scp=84937937902&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84937937902&partnerID=8YFLogxK

U2 - 10.1109/APEC.2015.7104512

DO - 10.1109/APEC.2015.7104512

M3 - Conference contribution

AN - SCOPUS:84937937902

T3 - Conference Proceedings - IEEE Applied Power Electronics Conference and Exposition - APEC

SP - 1276

EP - 1281

BT - APEC 2015 - 30th Annual IEEE Applied Power Electronics Conference and Exposition

T2 - 30th Annual IEEE Applied Power Electronics Conference and Exposition, APEC 2015

Y2 - 15 March 2015 through 19 March 2015

ER -

An optimal switching pattern for 'SiC+Si' hybrid device based Voltage Source Converters

Abstract

Publication series

Conference

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this