The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.
|Journal||Applied Physics Letters|
|State||Published - 2008|
Bibliographical noteFunding Information:
We thank Margaret Sutton for electrical measurements on the drop-cast films. We also acknowledge the support of the National Science Foundation under DMR-0348354.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)