Anisotropic mobility in large grain size solution processed organic semiconductor thin films

R. L. Headrick, S. Wo, F. Sansoz, J. E. Anthony

Research output: Contribution to journalArticlepeer-review

117 Scopus citations

Abstract

The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.

Original languageEnglish
Article number063302
JournalApplied Physics Letters
Volume92
Issue number6
DOIs
StatePublished - 2008

Bibliographical note

Funding Information:
We thank Margaret Sutton for electrical measurements on the drop-cast films. We also acknowledge the support of the National Science Foundation under DMR-0348354.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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