Anisotropic mobility in large grain size solution processed organic semiconductor thin films

R. L. Headrick; S. Wo; F. Sansoz; J. E. Anthony

doi:10.1063/1.2839394

Anisotropic mobility in large grain size solution processed organic semiconductor thin films

R. L. Headrick, S. Wo, F. Sansoz, J. E. Anthony

Chemistry

Research output: Contribution to journal › Article › peer-review

117 Scopus citations

Abstract

The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.

Original language	English
Article number	063302
Journal	Applied Physics Letters
Volume	92
Issue number	6
DOIs	https://doi.org/10.1063/1.2839394
State	Published - 2008

Bibliographical note

Funding Information:
We thank Margaret Sutton for electrical measurements on the drop-cast films. We also acknowledge the support of the National Science Foundation under DMR-0348354.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2839394

Cite this

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abstract = "The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.",

author = "Headrick, {R. L.} and S. Wo and F. Sansoz and Anthony, {J. E.}",

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AU - Headrick, R. L.

AU - Wo, S.

AU - Sansoz, F.

AU - Anthony, J. E.

N1 - Funding Information: We thank Margaret Sutton for electrical measurements on the drop-cast films. We also acknowledge the support of the National Science Foundation under DMR-0348354.

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AB - The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.

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Anisotropic mobility in large grain size solution processed organic semiconductor thin films

Abstract

Bibliographical note

ASJC Scopus subject areas

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