Abstract
The hollow pen method for writing thin films of materials from solution is utilized to deposit films of 6,13-bis(tri-isopropylsilylethynyl) pentacene (TIPS pentacene) onto Si O2 surfaces with pre-patterned source/drain gold contacts. We demonstrate that large domains are obtained for TIPS pentacene films deposited from 0.5-4.0 wt % solutions with toluene. Crystalline grains with (001) orientation are observed to grow with sizes that can exceed 1 mm along the writing direction. A preferred azimuthal orientation is also selected by the process, resulting in anisotropic field effect transistor mobility in the films.
Original language | English |
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Article number | 063302 |
Journal | Applied Physics Letters |
Volume | 92 |
Issue number | 6 |
DOIs | |
State | Published - 2008 |
Bibliographical note
Funding Information:We thank Margaret Sutton for electrical measurements on the drop-cast films. We also acknowledge the support of the National Science Foundation under DMR-0348354.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)