Abstract
Since the first observations of spontaneous ferromagnetic (FM) ordering in InAs and GaAs based diluted magnetic semiconductors (DMS), characterization of the anomalous Hall Effect (AHE) has played an important role in indirect but highly sensitive measurement of magnetization as well as demonstration of novel aspects of magnetic semiconductors. Here, we report on recent progress in realization of wide bandgap DMS semiconductors. Wide bandgap DMS was realized by various techniques from introduction of transition metal (TM) magnetic impurities by ion-implantation to epitaxial growth, utilizing co-doping schemes to enhance free carrier concentrations, which is thought to mediate the FM coupling between magnetic impurities. Although GaN based DMS exhibit magnetization above room temperature, measurement of AHE was found to be difficult, and distinct AHE signals were observed thus far at very low temperatures. Carbon co-doped AlAs ion-implanted with Manganese exhibits distinct AHE up to 210 K, corresponding well to the magnetization temperature dependence.
| Original language | English |
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| Pages | 300-311 |
| Number of pages | 12 |
| State | Published - 2004 |
| Event | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia - Honolulu, HI, United States Duration: Oct 3 2004 → Oct 8 2004 |
Conference
| Conference | State-of-the-Art Program on Compound Semiconductors XLI and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics V - Proceedings of the International Symposia |
|---|---|
| Country/Territory | United States |
| City | Honolulu, HI |
| Period | 10/3/04 → 10/8/04 |
ASJC Scopus subject areas
- General Engineering