Abstract
We report the fabrication and utilization of graphene-based, ion-sensitive field effect transistors (ISFETs) for measuring K+ efflux from immortalized and primary brain glial cells. There is currently an urgent need for developing new technologies for measuring cell membrane ion transport from primary cell cultures. K+-sensitive ISFETs were fabricated by coating the graphene surface with a polymer membrane containing the K+ ionophore valinomycin. Drain current versus gate voltage measurements demonstrated that the ISFETs display sensitivity to K+, but not to Na+ and Ca2+. To determine the feasibility of using ISFETs for recording cell membrane ion transport, ISFET sensors were inserted into recording chambers containing either primary rat glial cells or human U251-MG glioma cells. Activation of K+ channels in the glial cells resulted in a strong, time-dependent increase in the extracellular K+ concentration as measured with the ISFETs. Due to the noninvasive properties of the probes, the ISFETs will be useful for future multi-array, cell-based screening and toxicological studies of primary cell cultures.
Original language | English |
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Title of host publication | IEEE Sensors, SENSORS 2016 - Proceedings |
ISBN (Electronic) | 9781479982875 |
DOIs | |
State | Published - Jan 5 2017 |
Event | 15th IEEE Sensors Conference, SENSORS 2016 - Orlando, United States Duration: Oct 30 2016 → Nov 2 2016 |
Publication series
Name | Proceedings of IEEE Sensors |
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ISSN (Print) | 1930-0395 |
ISSN (Electronic) | 2168-9229 |
Conference
Conference | 15th IEEE Sensors Conference, SENSORS 2016 |
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Country/Territory | United States |
City | Orlando |
Period | 10/30/16 → 11/2/16 |
Bibliographical note
Funding Information:Supported by National Science Foundation Grant # CBET-1606882.
Publisher Copyright:
© 2016 IEEE.
Keywords
- cell membrane ion transport
- glial cells
- graphene
- ion-sensitive field effect transistors
ASJC Scopus subject areas
- Electrical and Electronic Engineering