Atomic layer engineering of perovskite oxides for chemically sharp heterointerfaces

Woo Seok Choi, Christopher M. Rouleau, Sung Seok A. Seo, Zhenlin Luo, Hua Zhou, Timothy T. Fister, Jeffrey A. Eastman, Paul H. Fuoss, Dillon D. Fong, Jonathan Z. Tischler, Gyula Eres, Matthew F. Chisholm, Ho Nyung Lee

Research output: Contribution to journalArticlepeer-review

48 Scopus citations


Atomic layer engineering enables fabrication of a chemically sharp oxide heterointerface. The interface formation and strain evolution during the initial growth of LaAlO3/SrTiO3 heterostructures by pulsed laser deposition are investigated in search of a means for controlling the atomic-sharpness of the interface. This study shows that inserting a monolayer of LaAlO3 grown at high oxygen pressure dramatically enhances interface abruptness.

Original languageEnglish
Pages (from-to)6423-6428
Number of pages6
JournalAdvanced Materials
Issue number48
StatePublished - Dec 18 2012


  • LaAlO /SrTiO
  • atomic layer engineering
  • epitaxial strain
  • perovskite oxide interface
  • pulsed laser deposition

ASJC Scopus subject areas

  • General Materials Science
  • Mechanics of Materials
  • Mechanical Engineering


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