Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si

M. J. Beck; L. Tsetseris; M. Caussanel; R. D. Schrimpf; D. M. Fleetwood; S. T. Pantelides

doi:10.1109/TNS.2006.885383

Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si

M. J. Beck, L. Tsetseris, M. Caussanel, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, Δ K_n-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoils < ∼ 2 keV, are close vacancy-interstitial pairs, or Frenkel Pairs (FPs). Based on previous studies of vacancy-dopant complex stabilities in Si, and new parameter-free quantum mechanical calculations of FP properties, details of the stable defect profiles arising from low-energy PKA recoil events are shown to give rise to non-zero values of Δ K_n-p.

Original language	English
Pages (from-to)	3621-3628
Number of pages	8
Journal	IEEE Transactions on Nuclear Science
Volume	53
Issue number	6
DOIs	https://doi.org/10.1109/TNS.2006.885383
State	Published - Dec 2006

Bibliographical note

Funding Information:
Manuscript received July 14, 2006; revised August 25, 2006. This work supported by the Air Force Office of Scientific Research (AFOSR) MURI program. Part of the calculations used resources at the Maui High Performance Computing Center, an Air Force Research Laboratory Center managed by the University of Hawaii.

Keywords

Density functional theory
Displacement damage
Electron traps
Frenkel pairs

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2006.885383

Cite this

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title = "Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si",

abstract = "While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, Δ Kn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoils < ∼ 2 keV, are close vacancy-interstitial pairs, or Frenkel Pairs (FPs). Based on previous studies of vacancy-dopant complex stabilities in Si, and new parameter-free quantum mechanical calculations of FP properties, details of the stable defect profiles arising from low-energy PKA recoil events are shown to give rise to non-zero values of Δ Kn-p.",

keywords = "Density functional theory, Displacement damage, Electron traps, Frenkel pairs",

author = "Beck, {M. J.} and L. Tsetseris and M. Caussanel and Schrimpf, {R. D.} and Fleetwood, {D. M.} and Pantelides, {S. T.}",

note = "Funding Information: Manuscript received July 14, 2006; revised August 25, 2006. This work supported by the Air Force Office of Scientific Research (AFOSR) MURI program. Part of the calculations used resources at the Maui High Performance Computing Center, an Air Force Research Laboratory Center managed by the University of Hawaii.",

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doi = "10.1109/TNS.2006.885383",

language = "English",

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AU - Beck, M. J.

AU - Tsetseris, L.

AU - Caussanel, M.

AU - Schrimpf, R. D.

AU - Fleetwood, D. M.

AU - Pantelides, S. T.

N1 - Funding Information: Manuscript received July 14, 2006; revised August 25, 2006. This work supported by the Air Force Office of Scientific Research (AFOSR) MURI program. Part of the calculations used resources at the Maui High Performance Computing Center, an Air Force Research Laboratory Center managed by the University of Hawaii.

PY - 2006/12

Y1 - 2006/12

N2 - While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, Δ Kn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoils < ∼ 2 keV, are close vacancy-interstitial pairs, or Frenkel Pairs (FPs). Based on previous studies of vacancy-dopant complex stabilities in Si, and new parameter-free quantum mechanical calculations of FP properties, details of the stable defect profiles arising from low-energy PKA recoil events are shown to give rise to non-zero values of Δ Kn-p.

AB - While calculated non-ionizing energy loss (NIEL) generally correlates well to first order with radiation-induced displacement damage rates, it does not account for some well-known differences in damage rates for n- and p-type Si. Here we show that the magnitude of these differences, Δ Kn-p, correlates closely with the fraction of total displacement damage due to low-energy primary knock-on atom (PKA) recoils. The primary products of these displacement damage events, with PKA recoils < ∼ 2 keV, are close vacancy-interstitial pairs, or Frenkel Pairs (FPs). Based on previous studies of vacancy-dopant complex stabilities in Si, and new parameter-free quantum mechanical calculations of FP properties, details of the stable defect profiles arising from low-energy PKA recoil events are shown to give rise to non-zero values of Δ Kn-p.

KW - Density functional theory

KW - Displacement damage

KW - Electron traps

KW - Frenkel pairs

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JF - IEEE Transactions on Nuclear Science

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ER -

Atomic-scale mechanisms for low-NIEL dopant-type dependent damage in Si

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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