Abstract
Semiconductor nanostructures have exhibited unique optoelectronic characteristics for a variety of applications, including flexible optoelectronic devices and systems. In this work, we analyze the effect of elastic bending on the eigenvalues (energies) of a particle in a semiconductor nanobelt in the framework of the single-band Schrödinger equation. The electronic state of the particle in the semiconductor nanobelt is described by a quantum well. Using the Airy functions, both the wave function and characteristic equation of the particle are obtained. Numerical results for an electron in a CdSe nanobelt reveal that the ground-state energy of the electron in the bent nanobelt decreases with the increase of the bending deformation and the change of the ground-state energy of the electron in the bent nanobelt decreases with the decrease of the nanobelt thickness.
Original language | English |
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Article number | 207558 |
Journal | Micro and Nanostructures |
Volume | 177 |
DOIs | |
State | Published - May 2023 |
Bibliographical note
Funding Information:FY is grateful for the support by the NSF through the grant CBET- 2018411 monitored by Dr. Nora F Savage.
Publisher Copyright:
© 2023 Elsevier Ltd
Keywords
- Bending
- Eigenvalue (energy)
- Nanobelt
- Strain gradient
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Condensed Matter Physics