Bending effect on the energy of a particle in a semiconductor nanobelt

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Abstract

Semiconductor nanostructures have exhibited unique optoelectronic characteristics for a variety of applications, including flexible optoelectronic devices and systems. In this work, we analyze the effect of elastic bending on the eigenvalues (energies) of a particle in a semiconductor nanobelt in the framework of the single-band Schrödinger equation. The electronic state of the particle in the semiconductor nanobelt is described by a quantum well. Using the Airy functions, both the wave function and characteristic equation of the particle are obtained. Numerical results for an electron in a CdSe nanobelt reveal that the ground-state energy of the electron in the bent nanobelt decreases with the increase of the bending deformation and the change of the ground-state energy of the electron in the bent nanobelt decreases with the decrease of the nanobelt thickness.

Original languageEnglish
Article number207558
JournalMicro and Nanostructures
Volume177
DOIs
StatePublished - May 2023

Bibliographical note

Funding Information:
FY is grateful for the support by the NSF through the grant CBET- 2018411 monitored by Dr. Nora F Savage.

Publisher Copyright:
© 2023 Elsevier Ltd

Keywords

  • Bending
  • Eigenvalue (energy)
  • Nanobelt
  • Strain gradient

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics

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