Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Ting Zhang, Waseem Ahmad, Bohan Liu, Yaoyu Xuan, Xiangxiao Ying, Zhijun Liu, Yuankai Li, Zhi Chen, Shibin Li

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

Original languageEnglish
Pages (from-to)16-19
Number of pages4
JournalMaterials Letters
Volume196
DOIs
StatePublished - Jun 1 2017

Bibliographical note

Publisher Copyright:
© 2017

Keywords

  • Broadband infrared response
  • Femtosecond laser irradiation
  • Hyperdoped silicon

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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