Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Ting Zhang; Waseem Ahmad; Bohan Liu; Yaoyu Xuan; Xiangxiao Ying; Zhijun Liu; Yuankai Li; Zhi Chen; Shibin Li

doi:10.1016/j.matlet.2017.03.011

Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Ting Zhang
, Waseem Ahmad
, Bohan Liu
, Yaoyu Xuan
, Xiangxiao Ying
, Zhijun Liu
, Yuankai Li
, Zhi Chen
, Shibin Li

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

Original language	English
Pages (from-to)	16-19
Number of pages	4
Journal	Materials Letters
Volume	196
DOIs	https://doi.org/10.1016/j.matlet.2017.03.011
State	Published - Jun 1 2017

Bibliographical note

Publisher Copyright:
© 2017

Funding

The research described in this letter was supported by National Natural Science Foundation of China under Grant Nos. 61421002, 61574029 and 61371046. This work was also partially supported by University of Kentucky.

Funders	Funder number
University of Kentucky
National Natural Science Foundation of China (NSFC)	61574029, 61371046, 61421002

Keywords

Broadband infrared response
Femtosecond laser irradiation
Hyperdoped silicon

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.matlet.2017.03.011

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title = "Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation",

abstract = "Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.",

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author = "Ting Zhang and Waseem Ahmad and Bohan Liu and Yaoyu Xuan and Xiangxiao Ying and Zhijun Liu and Yuankai Li and Zhi Chen and Shibin Li",

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year = "2017",

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doi = "10.1016/j.matlet.2017.03.011",

language = "English",

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T1 - Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

AU - Zhang, Ting

AU - Ahmad, Waseem

AU - Liu, Bohan

AU - Xuan, Yaoyu

AU - Ying, Xiangxiao

AU - Liu, Zhijun

AU - Li, Yuankai

AU - Chen, Zhi

AU - Li, Shibin

PY - 2017/6/1

Y1 - 2017/6/1

N2 - Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

AB - Broadband infrared response has attracted great attention due to its potential applications in silicon based photodetectors. We have studied broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation. The fabricated PN photodiodes exhibit several photoresponse spectral peaks in near and mid-infrared region of electromagnetic spectrum. The onset energies corresponding to the distinct sub-band gap photoresponse features are consistent with the active energy levels of known sulfur within the silicon band-gap. This technique may offer a promising approach to fabricate low-cost broadband silicon based detectors.

KW - Broadband infrared response

KW - Femtosecond laser irradiation

KW - Hyperdoped silicon

UR - https://www.scopus.com/pages/publications/85014938907

UR - https://www.scopus.com/pages/publications/85014938907#tab=citedBy

U2 - 10.1016/j.matlet.2017.03.011

DO - 10.1016/j.matlet.2017.03.011

M3 - Article

AN - SCOPUS:85014938907

SN - 0167-577X

VL - 196

SP - 16

EP - 19

JO - Materials Letters

JF - Materials Letters

ER -

Broadband infrared response of sulfur hyperdoped silicon under femtosecond laser irradiation

Abstract

Bibliographical note

Funding

Keywords

ASJC Scopus subject areas

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