Characteristics of Si3N4/GaAs metal-insulator-semiconductor interfaces with coherent Si/Al0.3Ga0.7As interlayers

Dae Gyu Park, Zhi Chen, Hadis Morkoç

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


Si3N4/GaAs metal-insulator-semiconductor (MIS) interfaces with Si(10Å)/ Al0.3Ga0.7As (20Å) interface control layers have been characterized using capacitance-voltage (C-V) and conductance methods. The structure was in situ grown by a combination of molecular beam epitaxy and chemical vapor deposition. A density of interface states in the 1.1 x 1011 eV-1 cm-2 range near the GaAs midgap as determined by the conductance loss has been attained with an ex situ solid phase annealing of 600°C in N2 ambient. A dip quasi-static C-V demonstrating the inversion of the minority-carrier verifies the decent interface quality of GaAs MIS interface. The hysteresis and frequency dispersion of the MIS capacitors were lower than 100 mV, some of them as low as 50 mV under a field swing of about ±2 MV/cm. The increase of the conductance loss at higher frequencies was observed when employing the surface potential toward conduction band edge, suggesting the dominance of faster traps. Self-aligned gate depletion mode GaAs metal-insulator-semiconductor field-effect transistors with Si/Al0.3Ga0.7As interlayers having 3 μm gate lengths exhibited a transconductance of about 114 mS/mm. The present article reports the first application of pseudomorphic Si/ Al0.3Ga0.7As interlayers to ideal GaAs MIS devices and demonstrates a favorable interface stability.

Original languageEnglish
Pages (from-to)1076-1082
Number of pages7
JournalJournal of Electronic Materials
Issue number9
StatePublished - Sep 1997


  • Interfaces
  • Metal-insulator-semiconductor (MIS)
  • Si/AlGaAs interlayers
  • SiN/GaAs

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering


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