Characteristics of Si3N4/Si/n-GaAs metal-insulator-semiconductor interfaces grown on GaAs(111)B substrate

Dae Gyu Park, Deda M. Diatezua, Zhi Chen, S. Noor Mohammad, Hadis Morkoç

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Interfacial properties of Al/Si3N4/Si/n-GaAs metal-insulator-semiconductor (MIS) capacitors grown on GaAs(111)B prepared with a combination of in situ molecular beam epitaxy and chemical vapor deposition techniques are presented. The density of the surface states in the high 1010 eV-1 cm-2 near the GaAs midgap for the GaAs grown at 575 and 625°C was obtained. The MIS structure with GaAs homoepitaxial layer grown at 625°C, showing smoother surface morphology than the surface grown at 575°C, exhibited small hysteresis which was as small as 30 mV under a field excursion of 1.5 MV/cm. The presence of a 1 MHz frequency response at 77 K requires that the traps be within 60 meV of the conduction band edge of GaAs and confirms the unpinned GaAs surface Fermi energy within GaAs band gap.

Original languageEnglish
Pages (from-to)3025-3027
Number of pages3
JournalApplied Physics Letters
Issue number20
StatePublished - Nov 11 1996

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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