Characterization of a complementary metal-oxide semiconductor operational amplifier from 300 to 4.2 K

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Abstract

We report the first operation of a commercially available complementary metal-oxide semiconductor operational amplifier, at liquid helium temperature. In addition, we have characterized several factors important to the practical application of such a circuit from room temperature down to 4.2 K. The temperature dependence and measurement techniques for open-loop gain, input offset voltage, input referred noise voltage, and quiescent current are presented. We will discuss our observations of low temperature behavior of the opamp with respect to others' previous results. This work represents an advancement over earlier studies which only reported opamp operation down to 77 or 30 K with measurements taken only at a limited number of temperatures instead of a broad range. Our data suggest that under special operating conditions the opamps can be effectively used with careful consideration of noise and gain performance. Input offset voltage levels and quiescent current (including power consumption) resemble normal room temperature operation.

Original languageEnglish
Pages (from-to)3691-3696
Number of pages6
JournalReview of Scientific Instruments
Volume66
Issue number6
DOIs
StatePublished - 1995

ASJC Scopus subject areas

  • Instrumentation

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