The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π /4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μS of 0.07 cm 2 /V s, current on-off ratio > 107, and subthreshold swing S≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.
|Journal||Applied Physics Letters|
|State||Published - Sep 27 2010|
Bibliographical noteFunding Information:
NIST/NRC Postdoctoral Associateship for B.R.C. and C.K.C., the Office of Naval Research Grant No. N00014-05-1-0019 for J.E.A. and M.A.L, and C. Snyder, K. Pernstich, and O. Jurchescu for insightful discussions.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)