Characterization of a soluble anthradithiophene derivative

B. R. Conrad; C. K. Chan; M. A. Loth; S. R. Parkin; X. Zhang; D. M. Delongchamp; J. E. Anthony; D. J. Gundlach

doi:10.1063/1.3495998

Characterization of a soluble anthradithiophene derivative

B. R. Conrad, C. K. Chan, M. A. Loth, S. R. Parkin, X. Zhang, D. M. Delongchamp, J. E. Anthony, D. J. Gundlach

Research output: Contribution to journal › Article › peer-review

17 Scopus citations

Abstract

The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π /4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μ_S of 0.07 cm ² /V s, current on-off ratio > 10⁷, and subthreshold swing S≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.

Original language	English
Article number	133306
Journal	Applied Physics Letters
Volume	97
Issue number	13
DOIs	https://doi.org/10.1063/1.3495998
State	Published - Sep 27 2010

Bibliographical note

Funding Information:
NIST/NRC Postdoctoral Associateship for B.R.C. and C.K.C., the Office of Naval Research Grant No. N00014-05-1-0019 for J.E.A. and M.A.L, and C. Snyder, K. Pernstich, and O. Jurchescu for insightful discussions.

Funding

NIST/NRC Postdoctoral Associateship for B.R.C. and C.K.C., the Office of Naval Research Grant No. N00014-05-1-0019 for J.E.A. and M.A.L, and C. Snyder, K. Pernstich, and O. Jurchescu for insightful discussions.

Funders	Funder number
Office of Naval Research

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3495998

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title = "Characterization of a soluble anthradithiophene derivative",

abstract = "The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π /4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μS of 0.07 cm 2 /V s, current on-off ratio > 107, and subthreshold swing S≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.",

author = "Conrad, {B. R.} and Chan, {C. K.} and Loth, {M. A.} and Parkin, {S. R.} and X. Zhang and Delongchamp, {D. M.} and Anthony, {J. E.} and Gundlach, {D. J.}",

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AU - Conrad, B. R.

AU - Chan, C. K.

AU - Loth, M. A.

AU - Parkin, S. R.

AU - Zhang, X.

AU - Delongchamp, D. M.

AU - Anthony, J. E.

AU - Gundlach, D. J.

N1 - Funding Information: NIST/NRC Postdoctoral Associateship for B.R.C. and C.K.C., the Office of Naval Research Grant No. N00014-05-1-0019 for J.E.A. and M.A.L, and C. Snyder, K. Pernstich, and O. Jurchescu for insightful discussions.

PY - 2010/9/27

Y1 - 2010/9/27

N2 - The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π /4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μS of 0.07 cm 2 /V s, current on-off ratio > 107, and subthreshold swing S≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.

AB - The structural and electrical properties of a solution processable material, 2,8-difluoro-5,11-tert-butyldimethylsilylethynyl anthradithiophene (TBDMS), were measured for single crystal transistors. TBDMS is observed to readily form single crystals from physical vapor zone sublimation. A columnar packing crystal structure, with an approximate π /4 radian rotational offset between neighboring molecules, is observed. Single crystal TBDMS transistors display a maximum observed saturation mobility μS of 0.07 cm 2 /V s, current on-off ratio > 107, and subthreshold swing S≈1 dec/V. The spectral current noises of single crystal devices display a 1/f flicker noise, while the metal-semiconductor charge injection barrier is estimated by ultraviolet photoemission spectroscopy.

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M1 - 133306

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Characterization of a soluble anthradithiophene derivative

Abstract

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