Abstract
We have studied the frequency and voltage dependences of voltage-induced torsional strains in orthorhombic TaS3 by measuring the modulation of the resonant frequency of an rf cavity containing the sample. The strain has an onset voltage below the charge-density-wave (CDW) threshold voltages associated with changes in shear compliance and resistance, suggesting that the strain is associated with polarization of the CDW rather than CDW current. Measurements with square-wave voltages show that the strain is very sluggish, not even reaching its dc value at a frequency of 0.1 Hz, but the dynamics appears to be very sample dependent. By applying oscillating torque while biasing the sample with a dc current, we have also looked for strain-induced voltage in the sample; none is observed at the low biases where the voltage-induced strains first occur, but an induced voltage is observed at higher biases, probably associated with a strain-dependent CDW conductance.
| Original language | English |
|---|---|
| Article number | 241110 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 79 |
| Issue number | 24 |
| DOIs | |
| State | Published - Jun 30 2009 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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