Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend

Xiaoran Li; Wiljan T.T. Smaal; Charlotte Kjellander; Bas Van Der Putten; Kevin Gualandris; Edsger C.P. Smits; John Anthony; Dirk J. Broer; Paul W.M. Blom; Jan Genoe; Gerwin Gelinck

doi:10.1016/j.orgel.2011.04.020

Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend

Xiaoran Li, Wiljan T.T. Smaal, Charlotte Kjellander, Bas Van Der Putten, Kevin Gualandris, Edsger C.P. Smits, John Anthony, Dirk J. Broer, Paul W.M. Blom, Jan Genoe, Gerwin Gelinck

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm²/Vs (maximum value 1.5 cm ²/Vs), on/off ratio exceeding 10⁷, and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.

Original language	English
Pages (from-to)	1319-1327
Number of pages	9
Journal	Organic Electronics
Volume	12
Issue number	8
DOIs	https://doi.org/10.1016/j.orgel.2011.04.020
State	Published - Aug 2011

Bibliographical note

Funding Information:
We acknowledge Peter Graat (Philips Research) for helpful discussions. The research leading to these results has received funding from the European Community’s Seventh Framework Programme ( FP7/2007–2013 ) under grant agreement No. 212311 of the ONE-P project and No. 216546 of the FLAME project.

Keywords

Blend
Contact barrier
Organic transistor
Single-droplet ink-jet printing
Substituted pentacene

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry (all)
Biomaterials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1016/j.orgel.2011.04.020

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Li, X., Smaal, W. T. T., Kjellander, C., Van Der Putten, B., Gualandris, K., Smits, E. C. P., Anthony, J., Broer, D. J., Blom, P. W. M., Genoe, J., & Gelinck, G. (2011). Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend. Organic Electronics, 12(8), 1319-1327. https://doi.org/10.1016/j.orgel.2011.04.020

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title = "Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend",

abstract = "We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm2/Vs (maximum value 1.5 cm 2/Vs), on/off ratio exceeding 107, and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.",

keywords = "Blend, Contact barrier, Organic transistor, Single-droplet ink-jet printing, Substituted pentacene",

author = "Xiaoran Li and Smaal, {Wiljan T.T.} and Charlotte Kjellander and {Van Der Putten}, Bas and Kevin Gualandris and Smits, {Edsger C.P.} and John Anthony and Broer, {Dirk J.} and Blom, {Paul W.M.} and Jan Genoe and Gerwin Gelinck",

note = "Funding Information: We acknowledge Peter Graat (Philips Research) for helpful discussions. The research leading to these results has received funding from the European Community{\textquoteright}s Seventh Framework Programme ( FP7/2007–2013 ) under grant agreement No. 212311 of the ONE-P project and No. 216546 of the FLAME project.",

year = "2011",

month = aug,

doi = "10.1016/j.orgel.2011.04.020",

language = "English",

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Li, X, Smaal, WTT, Kjellander, C, Van Der Putten, B, Gualandris, K, Smits, ECP, Anthony, J, Broer, DJ, Blom, PWM, Genoe, J & Gelinck, G 2011, 'Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend', Organic Electronics, vol. 12, no. 8, pp. 1319-1327. https://doi.org/10.1016/j.orgel.2011.04.020

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AU - Smaal, Wiljan T.T.

AU - Kjellander, Charlotte

AU - Van Der Putten, Bas

AU - Gualandris, Kevin

AU - Smits, Edsger C.P.

AU - Anthony, John

AU - Broer, Dirk J.

AU - Blom, Paul W.M.

AU - Genoe, Jan

AU - Gelinck, Gerwin

N1 - Funding Information: We acknowledge Peter Graat (Philips Research) for helpful discussions. The research leading to these results has received funding from the European Community’s Seventh Framework Programme ( FP7/2007–2013 ) under grant agreement No. 212311 of the ONE-P project and No. 216546 of the FLAME project.

PY - 2011/8

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N2 - We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm2/Vs (maximum value 1.5 cm 2/Vs), on/off ratio exceeding 107, and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.

AB - We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm2/Vs (maximum value 1.5 cm 2/Vs), on/off ratio exceeding 107, and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.

KW - Blend

KW - Contact barrier

KW - Organic transistor

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KW - Substituted pentacene

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Charge transport in high-performance ink-jet printed single-droplet organic transistors based on a silylethynyl substituted pentacene/insulating polymer blend

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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