We present a systematic study of the influence of material composition and ink-jet processing conditions on the charge transport in bottom-gate field-effect transistors based on blends of 6,13-bis(triisopropyl-silylethynyl) pentacene (TIPS-PEN) and polystyrene. After careful process optimizations of blending ratio and printing temperature we routinely can make transistors with an average mobility of 1 cm2/Vs (maximum value 1.5 cm 2/Vs), on/off ratio exceeding 107, and sharp turn-on in current (sub-threshold slopes approaching 60 mV/decade). These characteristics are superior to the TIPS-PEN only transistors. Using channel scaling measurements and scanning Kelvin probe microscopy, the sharp turn-on in current in the blends is attributed to a contact resistance that originates from a thin insulating layer between the injecting contacts and the semiconductor channel.
|Number of pages
|Published - Aug 2011
Bibliographical noteFunding Information:
We acknowledge Peter Graat (Philips Research) for helpful discussions. The research leading to these results has received funding from the European Community’s Seventh Framework Programme ( FP7/2007–2013 ) under grant agreement No. 212311 of the ONE-P project and No. 216546 of the FLAME project.
- Contact barrier
- Organic transistor
- Single-droplet ink-jet printing
- Substituted pentacene
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Chemistry (all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry