Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

A. K. Tripathi; E. C.P. Smits; M. Loth; J. E. Anthony; G. H. Gelinck

doi:10.1063/1.3591969

Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

A. K. Tripathi, E. C.P. Smits, M. Loth, J. E. Anthony, G. H. Gelinck

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, ε_r =2.1) and bottom (SiO₂, ε_r =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm² /Vs and bottom gate mobilities >0.1 cm²/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.

Original language	English
Article number	202106
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3591969
State	Published - May 16 2011

Bibliographical note

Funding Information:
The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.

Funding

The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.

Funders	Funder number
Seventh Framework Programme	216546

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.3591969

Cite this

@article{80863c57704746eaa9d9e1784c5cfb5a,

title = "Charge transport in solution processable polycrystalline dual-gate organic field effect transistors",

abstract = "Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.",

author = "Tripathi, {A. K.} and Smits, {E. C.P.} and M. Loth and Anthony, {J. E.} and Gelinck, {G. H.}",

year = "2011",

month = may,

day = "16",

doi = "10.1063/1.3591969",

language = "English",

volume = "98",

number = "20",

}

TY - JOUR

T1 - Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

AU - Tripathi, A. K.

AU - Smits, E. C.P.

AU - Loth, M.

AU - Anthony, J. E.

AU - Gelinck, G. H.

PY - 2011/5/16

Y1 - 2011/5/16

N2 - Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.

AB - Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.

UR - http://www.scopus.com/inward/record.url?scp=79957564656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957564656&partnerID=8YFLogxK

U2 - 10.1063/1.3591969

DO - 10.1063/1.3591969

M3 - Article

AN - SCOPUS:79957564656

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 202106

ER -

Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

Abstract

Bibliographical note

Funding

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this