Charge transport in solution processable polycrystalline dual-gate organic field effect transistors

A. K. Tripathi, E. C.P. Smits, M. Loth, J. E. Anthony, G. H. Gelinck

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.

Original languageEnglish
Article number202106
JournalApplied Physics Letters
Volume98
Issue number20
DOIs
StatePublished - May 16 2011

Bibliographical note

Funding Information:
The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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