Dual gate organic thin film transistors based on solution processable fluorinated 5,11 bis(triethylsilylethynyl) anthradithiophene semiconductor were fabricated. Top (Teflon, εr =2.1) and bottom (SiO2, εr =3.9) gate dielectrics with different dielectric constants were chosen. Top gate mobilities >1 cm2 /Vs and bottom gate mobilities >0.1 cm2/V s were achieved. Temperature dependent mobility measurements show thermally activated charge transport and a comparative analysis is performed in the framework of two models representing polaron hopping as well as hopping in Gaussian density of states (DOS), respectively.
|Journal||Applied Physics Letters|
|State||Published - May 16 2011|
Bibliographical noteFunding Information:
The research leading to these results has received funding from the European Community’s Seventh Framework Program (FP7/2007-2013) under grant Agreement No. 216546 of the FLAME project. We would like to thank Professor Paul W. M. Blom and Professor Dago de Leeuw for fruitful discussions.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)