Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci; Carlo De Falco; Marcelo I. Guzman; Sara Lee; Tomonori Honda

doi:10.1063/1.4709483

Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Francesco Ciucci, Carlo De Falco, Marcelo I. Guzman, Sara Lee, Tomonori Honda

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The chemisorption of O ₂ on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

Original language	English
Article number	183106
Journal	Applied Physics Letters
Volume	100
Issue number	18
DOIs	https://doi.org/10.1063/1.4709483
State	Published - Apr 30 2012

Bibliographical note

Funding Information:
F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

Funding

F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

Funders	Funder number
University of Kentucky

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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Cite this

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abstract = "The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schr{\"o}dinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.",

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AU - De Falco, Carlo

AU - Guzman, Marcelo I.

AU - Lee, Sara

AU - Honda, Tomonori

N1 - Funding Information: F.C. thanks HKUST for providing start-up funds. S.L. and F.C. thank the Marie Curie Reintegration Grant FastCell-256583. M.I.G. thanks funding from the University of Kentucky.

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N2 - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

AB - The chemisorption of O 2 on nanoscale n-doped CdS semiconductors is computed in terms of a Wolkenstein isotherm coupled to the Schrödinger Poisson equation. Present numerical results show the dependence of the chemisorbed charge and the differential capacitance on oxygen partial pressure. A comparison against the classical Poisson-Boltzmann approach shows a higher chemisorbed charge in the quantum model, but a greater differential capacitance in the classical case.

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Chemisorption on semiconductors: The role of quantum corrections on the space charge regions in multiple dimensions

Abstract

Bibliographical note

Funding

ASJC Scopus subject areas

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