Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

J. G. Connell; J. Nichols; J. H. Gruenewald; D. W. Kim; S. S.A. Seo

doi:10.1038/srep23621

Conducting LaAlO₃/SrTiO₃ heterointerfaces on atomically-flat substrates prepared by deionized-water

J. G. Connell, J. Nichols, J. H. Gruenewald, D. W. Kim, S. S.A. Seo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO₃ (STO) substrates affects the transport properties of LaAlO₃ (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

Original language	English
Article number	23621
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep23621
State	Published - Apr 1 2016

Bibliographical note

Funding Information:
We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).

Funding

We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).

Funders	Funder number
Kentucky Science and Technology Corporation
National Science Foundation (NSF)	1454200, DMR-1454200
Kentucky Science and Engineering Foundation	-148-502-14-328
National Research Foundation of Korea	2015001948

ASJC Scopus subject areas

General

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10.1038/srep23621

Cite this

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title = "Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water",

abstract = "We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.",

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note = "Funding Information: We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).",

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AU - Nichols, J.

AU - Gruenewald, J. H.

AU - Kim, D. W.

AU - Seo, S. S.A.

N1 - Funding Information: We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).

PY - 2016/4/1

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N2 - We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

AB - We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

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