Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water

J. G. Connell; J. Nichols; J. H. Gruenewald; D. W. Kim; S. S.A. Seo

doi:10.1038/srep23621

Conducting LaAlO₃/SrTiO₃ heterointerfaces on atomically-flat substrates prepared by deionized-water

J. G. Connell, J. Nichols, J. H. Gruenewald, D. W. Kim, S. S.A. Seo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO₃ (STO) substrates affects the transport properties of LaAlO₃ (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

Original language	English
Article number	23621
Journal	Scientific Reports
Volume	6
DOIs	https://doi.org/10.1038/srep23621
State	Published - Apr 1 2016

Bibliographical note

Funding Information:
We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).

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Cite this

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title = "Conducting LaAlO3/SrTiO3 heterointerfaces on atomically-flat substrates prepared by deionized-water",

abstract = "We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.",

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note = "Funding Information: We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).",

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AU - Connell, J. G.

AU - Nichols, J.

AU - Gruenewald, J. H.

AU - Kim, D. W.

AU - Seo, S. S.A.

N1 - Funding Information: We acknowledge the support of National Science Foundation grant DMR-1454200 for sample synthesis, transport measurements, and optical spectroscopy in addition to a grant from the Kentucky Science and Engineering Foundation as per Grant Agreement #KSEF-148-502-14-328 with the Kentucky Science and Technology Corporation. D.W.K. was supported by the National Research Foundation of Korea Grant (No. 2015001948).

PY - 2016/4/1

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N2 - We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

AB - We have investigated how the recently-developed water-leaching method for atomically-flat SrTiO3 (STO) substrates affects the transport properties of LaAlO3 (LAO) and STO heterointerfaces. Using pulsed laser deposition at identical growth conditions, we have synthesized epitaxial LAO thin-films on two different STO substrates, which are prepared by water-leaching and buffered hydrofluoric acid (BHF) etching methods. The structural, transport, and optical properties of LAO/STO heterostructures grown on water-leached substrates show the same high-quality as the samples grown on BHF-etched substrates. These results indicate that the water-leaching method can be used to grow complex oxide heterostructures with atomically well-defined heterointerfaces without safety concerns.

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