Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

Nitin Chopra, Padmakar D. Kichambare, Rodney Andrews, Bruce J. Hinds

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12-60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the "mesa" structure with a diameter equal to the thickness of the SiO2 layer.

Original languageEnglish
Pages (from-to)1177-1181
Number of pages5
JournalNano Letters
Volume2
Issue number10
DOIs
StatePublished - Oct 2002

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry (all)
  • Materials Science (all)
  • Condensed Matter Physics
  • Mechanical Engineering

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