Abstract
Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12-60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the "mesa" structure with a diameter equal to the thickness of the SiO2 layer.
Original language | English |
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Pages (from-to) | 1177-1181 |
Number of pages | 5 |
Journal | Nano Letters |
Volume | 2 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2002 |
ASJC Scopus subject areas
- Bioengineering
- General Chemistry
- General Materials Science
- Condensed Matter Physics
- Mechanical Engineering