Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

Nitin Chopra; Padmakar D. Kichambare; Rodney Andrews; Bruce J. Hinds

doi:10.1021/nl0257061

Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

Nitin Chopra, Padmakar D. Kichambare, Rodney Andrews, Bruce J. Hinds

Research output: Contribution to journal › Article › peer-review

26 Scopus citations

Abstract

Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO₂ (12-60 nm) are formed at the cleaved face of a Si/SiO₂/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H₂/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO₂ surface at the edge of the "mesa" structure with a diameter equal to the thickness of the SiO₂ layer.

Original language	English
Pages (from-to)	1177-1181
Number of pages	5
Journal	Nano Letters
Volume	2
Issue number	10
DOIs	https://doi.org/10.1021/nl0257061
State	Published - Oct 2002

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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abstract = "Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12-60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the {"}mesa{"} structure with a diameter equal to the thickness of the SiO2 layer.",

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AU - Andrews, Rodney

AU - Hinds, Bruce J.

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AB - Selective area growth of carbon nanotubes (CNT) has been used to control the diameter of CNTs. Narrow lines of SiO2 (12-60 nm) are formed at the cleaved face of a Si/SiO2/Si multilayer structure. CNTs are then grown by a chemical vapor deposition process with a ferrocene/xylene/ H2/Ar mixture at 700 °C. CNTs are observed to grow only on the exposed SiO2 surface at the edge of the "mesa" structure with a diameter equal to the thickness of the SiO2 layer.

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Control of Multiwalled Carbon Nanotube Diameter by Selective Growth on the Exposed Edge of a Thin Film Multilayer Structure

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