Crystallographic etching of few-layer graphene

Sujit S. Datta; Douglas R. Strachan; Samuel M. Khamis; A. T.Charlie Johnson

doi:10.1021/nl080583r

Crystallographic etching of few-layer graphene

Sujit S. Datta, Douglas R. Strachan, Samuel M. Khamis, A. T.Charlie Johnson

Physics And Astronomy

Research output: Contribution to journal › Article › peer-review

510 Scopus citations

Abstract

We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

Original language	English
Pages (from-to)	1912-1915
Number of pages	4
Journal	Nano Letters
Volume	8
Issue number	7
DOIs	https://doi.org/10.1021/nl080583r
State	Published - Jul 2008

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl080583r

Cite this

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title = "Crystallographic etching of few-layer graphene",

abstract = "We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.",

author = "Datta, {Sujit S.} and Strachan, {Douglas R.} and Khamis, {Samuel M.} and Johnson, {A. T.Charlie}",

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AU - Datta, Sujit S.

AU - Strachan, Douglas R.

AU - Khamis, Samuel M.

AU - Johnson, A. T.Charlie

PY - 2008/7

Y1 - 2008/7

N2 - We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

AB - We demonstrate a method by which few-layer graphene samples can be etched along crystallographic axes by thermally activated metallic nanoparticles. The technique results in long (>1 μm) crystallographic edges etched through to the insulating substrate, making the process potentially useful for atomically precise graphene device fabrication. This advance could enable atomically precise construction of integrated circuits from single graphene sheets with a wide range of technological applications.

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M3 - Article

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VL - 8

SP - 1912

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JO - Nano Letters

JF - Nano Letters

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ER -

Crystallographic etching of few-layer graphene

Abstract

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