Decoupling the Effects of Self-Assembled Monolayers on Gold, Silver, and Copper Organic Transistor Contacts

Chang Hyun Kim, Htay Hlaing, Jong Am Hong, Ji Hoon Kim, Yongsup Park, Marcia M. Payne, John E. Anthony, Yvan Bonnassieux, Gilles Horowitz, Ioannis Kymissis

Research output: Contribution to journalArticlepeer-review

76 Scopus citations

Abstract

In bottom-contact organic field-effect transistors (OFETs), the functionalization of source/drain electrodes leads to a tailored surface chemistry for film growth and controlled interface energetics for charge injection. This report describes a comprehensive investigation into separating and correlating the energetic and morphological effects of a self-assembled monolayers (SAMs) treatment on Au, Ag, and Cu electrodes. Fluorinated 5,11-bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT) and pentafluorobenzenethiol (PFBT) are employed as a soluble small-molecule semiconductor and a SAM material, respectively. Upon SAM modification, the Cu electrode devices benefit from a particularly dramatic performance improvement, closely approaching the performance of OFETs with PFBT-Au and PFBT-Ag. Ultraviolet photoemission spectroscopy, polarized optical microscopy, grazing-incidence wide-angle X-ray scattering elucidate the metal work function change and templated crystal growth with high crystallinity resulting from SAMs. The transmission-line method separates the channel and contact properties from the measured OFET current-voltage data, which conclusively describes the impact of the SAMs on charge injection and transport behavior.

Original languageEnglish
Article number1400384
JournalAdvanced Materials Interfaces
Volume2
Issue number2
DOIs
StatePublished - Jan 1 2015

Bibliographical note

Publisher Copyright:
© 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

  • contact resistance
  • copper
  • organic field-effect transistors
  • self-assembled monolayers
  • transmission-line method

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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