Determination of carrier densities of boron- and nitrogen-doped multiwalled carbon nanotubes using mott-schottky plots

Illayathambi Kunadian, Stephen M. Lipka, Christopher R. Swartz, Dali Qian, Rodney Andrews

Research output: Contribution to journalArticlepeer-review

38 Scopus citations


Knowledge of the carrier type (p- or n-type) and the carrier density of carbon nanotubes is critical in semiconductor applications such as thermoelectric power generation and Peltier cooling. In this paper, an experimental procedure for electrochemically characterizing multiwalled carbon nanotubes (MWCNTs) doped with boron or nitrogen has been presented. The carrier type and carrier density of the doped MWCNTs were determined by generating Mott-Schottky plots. The boron-doped nanotubes were synthesized using the substitution reaction method and the nitrogen-doped MWCNTs were synthesized using the continuous-feed chemical vapor deposition (CVD) method using pyridine or acetonitrile as the carbon precursor and ferrocene as the metal catalyst particle precursor. The nitrogen-doped nanotubes were synthesized at different CVD reaction temperatures: 650, 700, 800, and 900°C, and the effect of reaction temperature on the carrier densities of the carbon nanotubes was examined. Thermoelectric devices were constructed using pyridine nanotubes synthesized at different synthesis temperatures, and it was found that with any change (increase/decrease) in the carrier densities reflected a corresponding change in the thermoelectric power of the nanotubes.

Original languageEnglish
Pages (from-to)K110-K115
JournalJournal of the Electrochemical Society
Issue number6
StatePublished - 2009

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry


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