Abstract
Deuterium annealing has been widely demonstrated to be an effective way to improve the hot-carrier reliability of MOS devices. In this paper, we present a thorough study of the effect of deuterium pressure on the characteristics and hot-carrier reliability of MOS devices. N-channel submicron MOS transistors were annealed in deuterium with various pressures, temperatures and annealing times. It is found that device reliability initially improves as deuterium pressure is increased. It reaches a maximum and then begins to degrade with further increase of pressure. For the devices after hydrogen anneal, device reliability constantly degrades as the hydrogen pressure increases. It is concluded that the benefit of high pressure deuterium processing on device reliability is attributed to improved deuterium incorporation, while annealing-induced interface trap creation can negate the benefit at extreme high pressure. It is further shown that the processing temperature can be lowered with high pressure while still maintaining the deuteration benefit. This is particularly significant for future CMOS technology that requires a reduced thermal budget.
Original language | English |
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Pages (from-to) | 353-358 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 56 |
Issue number | 3-4 |
DOIs | |
State | Published - Aug 2001 |
Bibliographical note
Funding Information:This work was supported by the Office of Naval Research under Grants N00014-00-1-0234 and N000-14-98-1-0604 and the Beckman Institute for Advanced Science and Technology at the University of Illinois at Urbana-Champaign. The authors also thank Ronald Rattray of Spectra Gases Inc. for providing the deuterium used in these experiments.
Keywords
- CMOS devices
- Deuterium
- Hot-carrier effects
- Interface trap
- Reliability
- Silicon oxide
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering