Direct electron-beam patterning of Teflon AF

Vijayasree Karre; Phillip D. Keathley; Jing Guo; Jeffery T. Hastings

doi:10.1109/TNANO.2009.2013137

Direct electron-beam patterning of Teflon AF

Vijayasree Karre, Phillip D. Keathley, Jing Guo, Jeffery T. Hastings

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.

Original language	English
Article number	4757288
Pages (from-to)	139-141
Number of pages	3
Journal	IEEE Transactions on Nanotechnology
Volume	8
Issue number	2
DOIs	https://doi.org/10.1109/TNANO.2009.2013137
State	Published - Mar 2009

Keywords

Direct patterning
Electron-beam lithography
Fluoropolymers

ASJC Scopus subject areas

Computer Science Applications
Electrical and Electronic Engineering

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10.1109/TNANO.2009.2013137

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@article{ee860704d8304d7d8d42279387ff9e39,

title = "Direct electron-beam patterning of Teflon AF",

abstract = "Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.",

keywords = "Direct patterning, Electron-beam lithography, Fluoropolymers",

author = "Vijayasree Karre and Keathley, {Phillip D.} and Jing Guo and Hastings, {Jeffery T.}",

year = "2009",

month = mar,

doi = "10.1109/TNANO.2009.2013137",

language = "English",

volume = "8",

pages = "139--141",

number = "2",

}

TY - JOUR

T1 - Direct electron-beam patterning of Teflon AF

AU - Karre, Vijayasree

AU - Keathley, Phillip D.

AU - Guo, Jing

AU - Hastings, Jeffery T.

PY - 2009/3

Y1 - 2009/3

N2 - Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.

AB - Teflon AF thin films have been directly patterned by electron-beam lithography without the need for chemical development. The pattern depth was found to be linearly related to exposure dose and increases with increasing film thickness. Features as small as 200 nm have been resolved. Fourier transform infrared measurements indicate that the electron-beam-induced patterning is related to degradation of the fluorinated dioxole group present in amorphous Teflon.

KW - Direct patterning

KW - Electron-beam lithography

KW - Fluoropolymers

UR - http://www.scopus.com/inward/record.url?scp=62449248246&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=62449248246&partnerID=8YFLogxK

U2 - 10.1109/TNANO.2009.2013137

DO - 10.1109/TNANO.2009.2013137

M3 - Article

AN - SCOPUS:62449248246

SN - 1536-125X

VL - 8

SP - 139

EP - 141

JO - IEEE Transactions on Nanotechnology

JF - IEEE Transactions on Nanotechnology

IS - 2

M1 - 4757288

ER -

Direct electron-beam patterning of Teflon AF

Abstract

Keywords

ASJC Scopus subject areas

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