Direct evidence for multiple vibrational excitation of Si-H/D bonds for hot-carrier degradation of MOS transistors

Zhi Chen, Pangleen Ong

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations


The study of the desorption of hydrogen (H) and deuterium (D) on silicon in ultra high vacuum (UHV) by scanning tunneling microscopy (STM) led to the discovery of the giant H/D isotope effect. It was later used in passivation of the SiO2/Si interface, leading to large improvement of the hot-carrier lifetime of MOS transistors (J.W. Lyding et al, Appl. Phys. Lett., vol. 68, p. 2526, 1996). It is known that desorption mechanisms for the Si-H/D bonds by STM are multiple vibrational excitation at low voltage (T.-C. Shen et al, Science vol. 268, p. 1590, 1995). However, the chemical environment of the SiO2/Si interface in MOS devices is very different from that of Si in UHV, because in MOS transistors, electrons not only directly excite the Si-H/D bonds, but also are injected into the oxide. Recently, we showed that electrons that are injected into the oxide may not break Si-H/D bonds and only electrons that remain in the channel (and do not overcome the oxide/Si barrier) break the Si-H/D bonds (Z. Chen et al, IEEE Electron Dev. Lett. vol. 21, p. 24, 2000). Although it was suggested that the mechanisms for breakage of Si-H/D bonds in MOS transistors should be analogous to the explanation for the STM experiments, there is no direct experimental evidence to support the suggestion. In this paper, we present experimental results to show that the quantitative H/D isotope effect is dependent on the channel current density, which support the multiple vibrational excitation mechanisms.

Original languageEnglish
Title of host publication60th Device Research Conference, DRC 2002
Number of pages2
ISBN (Electronic)0780373170
StatePublished - 2002
Event60th Device Research Conference, DRC 2002 - Santa Barbara, United States
Duration: Jun 24 2002Jun 26 2002

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Conference60th Device Research Conference, DRC 2002
Country/TerritoryUnited States
CitySanta Barbara

Bibliographical note

Publisher Copyright:
© 2002 IEEE.


  • Degradation
  • Deuterium
  • Electrons
  • Hot carriers
  • Hydrogen
  • Isotopes
  • Microscopy
  • Silicon
  • Tunneling

ASJC Scopus subject areas

  • Electrical and Electronic Engineering


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