Direct observation of Li diffusion in Li-doped ZnO nanowires

Guohua Li; Lei Yu; Bethany M. Hudak; Yao Jen Chang; Hyeonjun Baek; Abhishek Sundararajan; Douglas R. Strachan; Gyu Chul Yi; Beth S. Guiton

doi:10.1088/2053-1591/3/5/054001

Direct observation of Li diffusion in Li-doped ZnO nanowires

Guohua Li, Lei Yu, Bethany M. Hudak, Yao Jen Chang, Hyeonjun Baek, Abhishek Sundararajan, Douglas R. Strachan, Gyu Chul Yi, Beth S. Guiton

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7 Scopus citations

Abstract

The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 ° C and 600 ° C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Li_i) to Zn-site substitutional Li (Li_Zn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.

Original language	English
Article number	054001
Journal	Materials Research Express
Volume	3
Issue number	5
DOIs	https://doi.org/10.1088/2053-1591/3/5/054001
State	Published - May 2016

Bibliographical note

Publisher Copyright:
© 2016 IOP Publishing Ltd.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Biomaterials
Surfaces, Coatings and Films
Polymers and Plastics
Metals and Alloys

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title = "Direct observation of Li diffusion in Li-doped ZnO nanowires",

abstract = "The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 ° C and 600 ° C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Lii) to Zn-site substitutional Li (LiZn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.",

author = "Guohua Li and Lei Yu and Hudak, {Bethany M.} and Chang, {Yao Jen} and Hyeonjun Baek and Abhishek Sundararajan and Strachan, {Douglas R.} and Yi, {Gyu Chul} and Guiton, {Beth S.}",

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T1 - Direct observation of Li diffusion in Li-doped ZnO nanowires

AU - Li, Guohua

AU - Yu, Lei

AU - Hudak, Bethany M.

AU - Chang, Yao Jen

AU - Baek, Hyeonjun

AU - Sundararajan, Abhishek

AU - Strachan, Douglas R.

AU - Yi, Gyu Chul

AU - Guiton, Beth S.

PY - 2016/5

Y1 - 2016/5

N2 - The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 ° C and 600 ° C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Lii) to Zn-site substitutional Li (LiZn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.

AB - The direct observation of Li diffusion in Li-doped zinc oxide nanowires (NWs) was realized by using in situ heating in the scanning transmission electron microscope (STEM). A continuous increase of low atomic mass regions within a single NW was observed between 200 ° C and 600 ° C when heated in vacuum, which was explained by the conversion of interstitial to substitutional Li in the ZnO NW host lattice. A kick-out mechanism is introduced to explain the migration and conversion of the interstitial Li (Lii) to Zn-site substitutional Li (LiZn), and this mechanism is verified with low-temperature (11 K) photoluminescence measurements on as-grown and annealed Li-doped zinc oxide NWs, as well as the observation of an increase of NW surface roughing with applied bias.

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Direct observation of Li diffusion in Li-doped ZnO nanowires

Abstract

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