Disorder-recrystallization effects in low-energy beam-solid interactions

M. J. Beck, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

21 Scopus citations


It is widely believed that high-kinetic-energy (>1keV) recoils in crystalline Si result in the formation of amorphous regions, whereas low-kinetic-energy recoils lead directly to isolated point defects. Here we study the response of a Si crystal using dynamical density-functional calculations and show that recoils of much less than 1keV result in highly disordered regions that persist for hundreds of femtoseconds. Therefore, beam-induced defect formation is controlled by recrystallization processes during dynamic annealing even following low-energy ion implantation.

Original languageEnglish
Article number185502
JournalPhysical Review Letters
Issue number18
StatePublished - May 6 2008

ASJC Scopus subject areas

  • General Physics and Astronomy


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