Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abhishek Sundararajan, Mathias J. Boland, D. Patrick Hunley, Douglas R. Strachan

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

Original languageEnglish
Article number253505
JournalApplied Physics Letters
Volume103
Issue number25
DOIs
StatePublished - Dec 16 2013

Bibliographical note

Funding Information:
We acknowledge useful discussions with J. W. Brill and J. Todd Hastings. The work was supported in part by the National Science Foundation (NSF) through Grant No. DMR-0805136, the Kentucky NSF EPSCoR program through Award No. EPS-0814194, the University of Kentucky (UK) Center for Advanced Materials (CAM), a grant from the Kentucky Science and Engineering Foundation as per Grant/Award Agreement No. KSEF-2928-RDE-016 with the Kentucky Science and Technology Corporation, and a Research Support Grant from the University of Kentucky Office of the Vice President for Research.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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