Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abhishek Sundararajan; Mathias J. Boland; D. Patrick Hunley; Douglas R. Strachan

doi:10.1063/1.4851956

Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abhishek Sundararajan, Mathias J. Boland, D. Patrick Hunley, Douglas R. Strachan

Physics And Astronomy

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

Original language	English
Article number	253505
Journal	Applied Physics Letters
Volume	103
Issue number	25
DOIs	https://doi.org/10.1063/1.4851956
State	Published - Dec 16 2013

Bibliographical note

Funding Information:
We acknowledge useful discussions with J. W. Brill and J. Todd Hastings. The work was supported in part by the National Science Foundation (NSF) through Grant No. DMR-0805136, the Kentucky NSF EPSCoR program through Award No. EPS-0814194, the University of Kentucky (UK) Center for Advanced Materials (CAM), a grant from the Kentucky Science and Engineering Foundation as per Grant/Award Agreement No. KSEF-2928-RDE-016 with the Kentucky Science and Technology Corporation, and a Research Support Grant from the University of Kentucky Office of the Vice President for Research.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4851956

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abstract = "The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.",

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AU - Patrick Hunley, D.

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N1 - Funding Information: We acknowledge useful discussions with J. W. Brill and J. Todd Hastings. The work was supported in part by the National Science Foundation (NSF) through Grant No. DMR-0805136, the Kentucky NSF EPSCoR program through Award No. EPS-0814194, the University of Kentucky (UK) Center for Advanced Materials (CAM), a grant from the Kentucky Science and Engineering Foundation as per Grant/Award Agreement No. KSEF-2928-RDE-016 with the Kentucky Science and Technology Corporation, and a Research Support Grant from the University of Kentucky Office of the Vice President for Research.

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N2 - The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

AB - The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

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Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abstract

Bibliographical note

ASJC Scopus subject areas

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