Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abhishek Sundararajan; Mathias J. Boland; D. Patrick Hunley; Douglas R. Strachan

doi:10.1063/1.4851956

Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abhishek Sundararajan, Mathias J. Boland, D. Patrick Hunley, Douglas R. Strachan

Physics And Astronomy

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

Original language	English
Article number	253505
Journal	Applied Physics Letters
Volume	103
Issue number	25
DOIs	https://doi.org/10.1063/1.4851956
State	Published - Dec 16 2013

Bibliographical note

Funding Information:
We acknowledge useful discussions with J. W. Brill and J. Todd Hastings. The work was supported in part by the National Science Foundation (NSF) through Grant No. DMR-0805136, the Kentucky NSF EPSCoR program through Award No. EPS-0814194, the University of Kentucky (UK) Center for Advanced Materials (CAM), a grant from the Kentucky Science and Engineering Foundation as per Grant/Award Agreement No. KSEF-2928-RDE-016 with the Kentucky Science and Technology Corporation, and a Research Support Grant from the University of Kentucky Office of the Vice President for Research.

Funding

We acknowledge useful discussions with J. W. Brill and J. Todd Hastings. The work was supported in part by the National Science Foundation (NSF) through Grant No. DMR-0805136, the Kentucky NSF EPSCoR program through Award No. EPS-0814194, the University of Kentucky (UK) Center for Advanced Materials (CAM), a grant from the Kentucky Science and Engineering Foundation as per Grant/Award Agreement No. KSEF-2928-RDE-016 with the Kentucky Science and Technology Corporation, and a Research Support Grant from the University of Kentucky Office of the Vice President for Research.

Funders	Funder number
NSF-Kentucky EPSCoR	EPS-0814194
Kentucky Science and Technology Corporation
Office of the Vice President for Research at the University of Kentucky
National Science Foundation (NSF)	DMR-0805136
University of Kentucky
Kentucky Science and Engineering Foundation	KSEF-2928-RDE-016

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4851956

Cite this

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title = "Doping and hysteretic switching of polymer-encapsulated graphene field effect devices",

abstract = "The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.",

author = "Abhishek Sundararajan and Boland, \{Mathias J.\} and \{Patrick Hunley\}, D. and Strachan, \{Douglas R.\}",

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AU - Patrick Hunley, D.

AU - Strachan, Douglas R.

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N2 - The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

AB - The effects of encapsulating graphene with poly(methyl methacrylate) (PMMA) polymer are determined through in situ electrical transport measurements. After regenerating graphene devices in dry-nitrogen environments, PMMA is applied to their surfaces. Low-temperature annealing decreases the overall doping level, suggesting that residual solvent plays an important role in the doping. For few-layer graphene devices, we even observe stable n-doping through annealing. Application of solvent onto encapsulated devices demonstrates enhanced hysteric switching between p and n-doped states. The stability and ubiquitous use of PMMA in nanolithography make this polymer a potentially useful localized doping agent for graphene and other two-dimensional materials.

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Doping and hysteretic switching of polymer-encapsulated graphene field effect devices

Abstract

Bibliographical note

Funding

ASJC Scopus subject areas

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