Doping-type dependence of damage in silicon diodes exposed to X-ray, proton, and He+ irradiations

M. Caussanel, A. Canals, S. K. Dixit, M. J. Beck, A. D. Touboul, R. D. Schrimpf, D. M. Fleetwood, S. T. Pantelides

Research output: Contribution to journalArticlepeer-review

17 Scopus citations

Abstract

Different amounts of degradation for n-Si and p-Si are observed after X-ray, H+, and He+ irradiations. Recombination lifetime and forward I-V measurements made on abrupt-junction diodes are compared to theory. Ionizing damage and displacement damage associated with surface and bulk trapping mechanisms, respectively, compete with each other and lead to different behaviors according to the doping type of the silicon on the lightly doped side of the junction. Surface effects are dominant in the n+/p diodes compared to the p+/n diodes; bulk trapping prevails in the n-Si compared to p-Si. Independently of ion type or fluence, the life-time damage factor due to irradiation is worse in the p-Si than in the n-Si by a factor of 2-3 times.

Original languageEnglish
Pages (from-to)1925-1930
Number of pages6
JournalIEEE Transactions on Nuclear Science
Volume54
Issue number6
DOIs
StatePublished - Dec 2007

Bibliographical note

Funding Information:
Manuscript received July 20, 2007; revised September 3, 2007. This work was supported in part by the AFOSR MURI Program. M. Caussanel is with the Université de Perpignan Via Domitia, Perpignan, 66860, France (e-mail: matthieu.caussanel@univ-perp.fr). A. Canals is with TRAD, Labege 31674, France (e-mail: anna.canals@trad. fr). S. K. Dixit is with the Interdisciplinary Materials Science Program, Vanderbilt University, Nashville, TN 37235 USA (e-mail: sriram.k.dixit@ vanderbilt.edu). M. J. Beck and S. T. Pantelides are with the Department of Physics and Astronomy, Vanderbilt University, Nashville, TN 37235 USA (e-mail: m.beck@vanderbilt.edu; pantelides@vanderbilt.edu). A. D. Touboul is with IES, Université Montpellier II, F-34095 Montpellier cedex 5, France (e-mail: antoine.touboul@ies.univ-montp2.fr). R. D. Schrimpf and D. M. Fleetwood are with the Department of Electrical Engineering and Computer Science, Vanderbilt University, Nashville, TN 37235 USA (e-mail: ron.schrimpf@vanderbilt.edu; dan.fleetwood@vanderbilt.edu). Color versions of one or more of the figures in this paper are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/TNS.2007.909021

Keywords

  • Doping
  • Ion radiation effects
  • Ionization
  • Semiconductor junctions

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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