Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Zhi Chen; Jun Guo; Chandan B. Samantaray

Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Zhi Chen, Jun Guo, Chandan B. Samantaray

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

5 Scopus citations

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	240-241
Number of pages	2
State	Published - 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: Dec 7 2005 → Dec 9 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Conference

Conference	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	12/7/05 → 12/9/05

Bibliographical note

Funding Information:
Chen Z. Career: fundamental reliability physics of MOS devices based on deuterium isotope effects. Washington, DC: National Science Foundation Proposal # 0093156; 2000.

Funding Information:
This research is supported by National Science Foundation (ECS-0093156 and EPS- 0447479) and the Office of Vice President for Research, University of Kentucky. We thank Dr. Chandan Samantaray, Pangleen Ong, and Wei Wen for technical assistance, and Dr. Janet Lumpp for fabrication of shadow masks. We also thank Prof. Fuqian Yang of University of Kentucky, Ross M. Boyle of Thermo Electron Corporation, and Si-Chen Lee of National Taiwan University for helpful suggestion.

ASJC Scopus subject areas

General Engineering

Cite this

@inproceedings{11116d1964204b4c9f6d42ad0454f7a9,

title = "Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification",

author = "Zhi Chen and Jun Guo and Samantaray, {Chandan B.}",

note = "Funding Information: Chen Z. Career: fundamental reliability physics of MOS devices based on deuterium isotope effects. Washington, DC: National Science Foundation Proposal # 0093156; 2000. Funding Information: This research is supported by National Science Foundation (ECS-0093156 and EPS- 0447479) and the Office of Vice President for Research, University of Kentucky. We thank Dr. Chandan Samantaray, Pangleen Ong, and Wei Wen for technical assistance, and Dr. Janet Lumpp for fabrication of shadow masks. We also thank Prof. Fuqian Yang of University of Kentucky, Ross M. Boyle of Thermo Electron Corporation, and Si-Chen Lee of National Taiwan University for helpful suggestion. ; 2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

year = "2005",

language = "English",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "240--241",

booktitle = "2005 International Semiconductor Device Research Symposium",

}

Chen, Z, Guo, J & Samantaray, CB 2005, Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification. in 2005 International Semiconductor Device Research Symposium., 1596073, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 240-241, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 12/7/05.

Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification. / Chen, Zhi; Guo, Jun; Samantaray, Chandan B.
2005 International Semiconductor Device Research Symposium. 2005. p. 240-241 1596073 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

AU - Chen, Zhi

AU - Guo, Jun

AU - Samantaray, Chandan B.

N1 - Funding Information: Chen Z. Career: fundamental reliability physics of MOS devices based on deuterium isotope effects. Washington, DC: National Science Foundation Proposal # 0093156; 2000. Funding Information: This research is supported by National Science Foundation (ECS-0093156 and EPS- 0447479) and the Office of Vice President for Research, University of Kentucky. We thank Dr. Chandan Samantaray, Pangleen Ong, and Wei Wen for technical assistance, and Dr. Janet Lumpp for fabrication of shadow masks. We also thank Prof. Fuqian Yang of University of Kentucky, Ross M. Boyle of Thermo Electron Corporation, and Si-Chen Lee of National Taiwan University for helpful suggestion.

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=33847217613&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847217613&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:33847217613

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 240

EP - 241

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Publication series

Conference

Bibliographical note

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this