Dramatic reduction of gate leakage current of ultrathin oxides through oxide structure modification

Engineering

• Reduction 100%
• Energy Engineering 100%
• Enhancement 100%
• Couplings 100%
• Effective Mass 100%
• Rapid Thermal Processing 50%
• Si Interface 50%
• Barrier Height 50%
• Band Structure 50%
• Energy Band 50%
• Direct Tunneling 50%
• Breakdown Voltage 50%

Chemistry

• Structure 100%
• Oxide 100%
• Reduction 100%
• Leakage Current 100%
• Chemical Bond 66%
• Energy 50%
• Phonon 33%
• Electronic Band Structure 16%
• Breakdown Voltage 16%
• Tunneling Current 16%

Material Science

• Oxide 100%
• Electronic Band Structure 16%