Dynamics of charge flow in the channel of a thin-film field-effect transistor

E. G. Bittle; J. W. Brill; J. P. Straley

doi:10.1063/1.4764896

Dynamics of charge flow in the channel of a thin-film field-effect transistor

E. G. Bittle, J. W. Brill, J. P. Straley

Physics And Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.

Original language	English
Article number	094507
Journal	Journal of Applied Physics
Volume	112
Issue number	9
DOIs	https://doi.org/10.1063/1.4764896
State	Published - Nov 1 2012

Bibliographical note

Funding Information:
We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.

ASJC Scopus subject areas

Physics and Astronomy (all)

Access to Document

10.1063/1.4764896

Cite this

@article{62e711c1821547c3880fa7236618d8ff,

title = "Dynamics of charge flow in the channel of a thin-film field-effect transistor",

abstract = "The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.",

author = "Bittle, {E. G.} and Brill, {J. W.} and Straley, {J. P.}",

note = "Funding Information: We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.",

year = "2012",

month = nov,

day = "1",

doi = "10.1063/1.4764896",

language = "English",

volume = "112",

number = "9",

}

TY - JOUR

T1 - Dynamics of charge flow in the channel of a thin-film field-effect transistor

AU - Bittle, E. G.

AU - Brill, J. W.

AU - Straley, J. P.

N1 - Funding Information: We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.

PY - 2012/11/1

Y1 - 2012/11/1

N2 - The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.

AB - The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.

UR - http://www.scopus.com/inward/record.url?scp=84870941795&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870941795&partnerID=8YFLogxK

U2 - 10.1063/1.4764896

DO - 10.1063/1.4764896

M3 - Article

AN - SCOPUS:84870941795

SN - 0021-8979

VL - 112

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

M1 - 094507

ER -

Dynamics of charge flow in the channel of a thin-film field-effect transistor

Abstract

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this