The local conductivity in the channel of a thin-film field-effect transistor is proportional to the charge density induced by the local gate voltage. We show how this determines the frequency- and position-dependence of the charge induced in the channel for the case of zero applied current: zero drain-source voltage with charge induced by a square-wave voltage applied to the gate, assuming constant mobility and negligible contact impedances. An approximate expression for the frequency dependence of the induced charge in the center of the channel can be conveniently used to determine the charge mobility. Fits of electro-optic measurements of the induced charge in organic transistors are used as examples.
|Journal||Journal of Applied Physics|
|State||Published - Nov 1 2012|
Bibliographical noteFunding Information:
We thank John Anthony for providing TIPS-Pn and helpful discussions. This work was supported in part by the U.S. National Science Foundation through Grant Nos. DMR-0800367 and EPS-0814194 and the Center for Advanced Materials.
ASJC Scopus subject areas
- Physics and Astronomy (all)