TY - JOUR
T1 - Dynamics of the hysteretic voltage-induced torsional strain in tantalum trisulfide
AU - Nichols, J.
AU - Sandamali Weerasooriya, C.
AU - Brill, J. W.
PY - 2010/8/4
Y1 - 2010/8/4
N2 - We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave (CDW) depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 s. The square-wave response shows that the dynamic responses to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.
AB - We have studied how the hysteretic voltage-induced torsional strain, associated with charge-density-wave (CDW) depinning, in orthorhombic tantalum trisulfide depends on square-wave and triangle-wave voltages of different frequencies and amplitudes. The strains are measured by placing the sample, with a wire glued to the center as a transducer, in a radio frequency cavity and measuring the modulated response of the cavity. From the triangle waves, we map out the time dependence of the hysteresis loops, and find that the hysteresis loops broaden for waves with periods less than 30 s. The square-wave response shows that the dynamic responses to positive and negative voltages can be quite different. The overall frequency dependence is relaxational, but with multiple relaxation times which typically decrease with increasing voltage. The detailed dynamic response is very sample dependent, suggesting that it depends in detail on interactions of the CDW with sample defects.
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U2 - 10.1088/0953-8984/22/33/334224
DO - 10.1088/0953-8984/22/33/334224
M3 - Article
C2 - 21386514
AN - SCOPUS:77956940162
SN - 0953-8984
VL - 22
JO - Journal of Physics Condensed Matter
JF - Journal of Physics Condensed Matter
IS - 33
M1 - 334224
ER -