Effect of added Si on the resistivity of co and Ni films

S. J. Kim, Y. T. Cheng, M. A. Nicolet

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Chemical and electrical changes in Co/Si and Ni/Si bilayered films on SiO2 substrates are investigated. The Si thicknesses chosen correspond to 0 to 11 atomic percent of the total film. After the films were vacuum annealed at 400, 500, 600, 700, 800, and 900 °C for 1 hour, they were examined by means of4 He+ backscattering spectrometry, x-ray Read camera and diffractometer, scanning electron and optical microscopy, and four point probe resistivity measurements. At low annealing temperatures, we observe the Ni5 Si2, Ni3 Si and Co2 Si phases. At 800 and 900 °C, Si dissolves in the film. The film resistivity 2rncredrsaespidly as the amount of dissolved Si in the film rises. For example, 2 at.% and 3.6 at.% suffice to double the film resistivity of Co and Ni, respectively. The lattice parameter perpendicular to the plane of the film for films annealed at 900 °C was determined at room temperature and found to decrease with increasing Si content. The surface of a pure metal film becomes nonuniform upon 900 °C annealing; adding as little as 2.5 at.% Si stabilizes the film morphology.

Original languageEnglish
Pages (from-to)261-269
Number of pages9
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - Jun 26 1986

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Effect of added Si on the resistivity of co and Ni films'. Together they form a unique fingerprint.

Cite this