Effect of crystallinity on endurance and switching behavior of HfO x-based resistive memory devices

Jihan O. Capulong; Benjamin D. Briggs; Seann M. Bishop; Michael Q. Hovish; Richard J. Matyi; Nathaniel C. Cady

doi:10.1109/IIRW.2012.6468907

Effect of crystallinity on endurance and switching behavior of HfO _x-based resistive memory devices

Jihan O. Capulong, Benjamin D. Briggs, Seann M. Bishop, Michael Q. Hovish, Richard J. Matyi, Nathaniel C. Cady

Chemical and Materials Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

8 Scopus citations

Abstract

This paper compares the resistive switching properties of crystalline and amorphous HfO_x thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O₂ partial pressures. The crystallinity of the two HfO_x samples was verified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Ni/HfO_x/Cu devices fabricated from both 50 nm thick amorphous and crystalline HfO_x films exhibited consistent bipolar switching. Average electroforming voltage for the crystalline and amorphous weare <20 V and <11 V, respectively. Both devices showed similar average set (V _set) and reset (V_reset) voltages of -2.25 V and 0.35 V, respectively, independent of electrode size and current compliance. Preliminary endurance data shows that the amorphous device shows the better endurance (14,300 cycles) compared to that of the crystalline device (102,000 cycles), which is at about an order of magnitude higher than the endurance of the crystalline device. Switching uniformity for both devices showeds similar trends with dispersions (standard deviation/mean ratio) of about 30% for V _set and V_reset.

Original language	English
Title of host publication	2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012
Pages	22-25
Number of pages	4
DOIs	https://doi.org/10.1109/IIRW.2012.6468907
State	Published - 2012
Event	2012 IEEE International Integrated Reliability Workshop, IIRW 2012 - South Lake Tahoe, CA, United States Duration: Oct 14 2012 → Oct 18 2012

Publication series

Name	IEEE International Integrated Reliability Workshop Final Report
ISSN (Print)	1930-8841
ISSN (Electronic)	2374-8036

Conference

Conference	2012 IEEE International Integrated Reliability Workshop, IIRW 2012
Country/Territory	United States
City	South Lake Tahoe, CA
Period	10/14/12 → 10/18/12

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IIRW.2012.6468907

Cite this

Capulong, J. O., Briggs, B. D., Bishop, S. M., Hovish, M. Q., Matyi, R. J., & Cady, N. C. (2012). Effect of crystallinity on endurance and switching behavior of HfO _x-based resistive memory devices. In 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012 (pp. 22-25). Article 6468907 (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW.2012.6468907

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title = "Effect of crystallinity on endurance and switching behavior of HfO x-based resistive memory devices",

abstract = "This paper compares the resistive switching properties of crystalline and amorphous HfOx thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O2 partial pressures. The crystallinity of the two HfOx samples was verified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Ni/HfOx/Cu devices fabricated from both 50 nm thick amorphous and crystalline HfOx films exhibited consistent bipolar switching. Average electroforming voltage for the crystalline and amorphous weare <20 V and <11 V, respectively. Both devices showed similar average set (V set) and reset (Vreset) voltages of -2.25 V and 0.35 V, respectively, independent of electrode size and current compliance. Preliminary endurance data shows that the amorphous device shows the better endurance (14,300 cycles) compared to that of the crystalline device (102,000 cycles), which is at about an order of magnitude higher than the endurance of the crystalline device. Switching uniformity for both devices showeds similar trends with dispersions (standard deviation/mean ratio) of about 30% for V set and Vreset.",

author = "Capulong, {Jihan O.} and Briggs, {Benjamin D.} and Bishop, {Seann M.} and Hovish, {Michael Q.} and Matyi, {Richard J.} and Cady, {Nathaniel C.}",

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Capulong, JO, Briggs, BD, Bishop, SM, Hovish, MQ, Matyi, RJ & Cady, NC 2012, Effect of crystallinity on endurance and switching behavior of HfO _x-based resistive memory devices. in 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012., 6468907, IEEE International Integrated Reliability Workshop Final Report, pp. 22-25, 2012 IEEE International Integrated Reliability Workshop, IIRW 2012, South Lake Tahoe, CA, United States, 10/14/12. https://doi.org/10.1109/IIRW.2012.6468907

Effect of crystallinity on endurance and switching behavior of HfO _x-based resistive memory devices. / Capulong, Jihan O.; Briggs, Benjamin D.; Bishop, Seann M. et al.
2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012. 2012. p. 22-25 6468907 (IEEE International Integrated Reliability Workshop Final Report).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Matyi, Richard J.

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N2 - This paper compares the resistive switching properties of crystalline and amorphous HfOx thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O2 partial pressures. The crystallinity of the two HfOx samples was verified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Ni/HfOx/Cu devices fabricated from both 50 nm thick amorphous and crystalline HfOx films exhibited consistent bipolar switching. Average electroforming voltage for the crystalline and amorphous weare <20 V and <11 V, respectively. Both devices showed similar average set (V set) and reset (Vreset) voltages of -2.25 V and 0.35 V, respectively, independent of electrode size and current compliance. Preliminary endurance data shows that the amorphous device shows the better endurance (14,300 cycles) compared to that of the crystalline device (102,000 cycles), which is at about an order of magnitude higher than the endurance of the crystalline device. Switching uniformity for both devices showeds similar trends with dispersions (standard deviation/mean ratio) of about 30% for V set and Vreset.

AB - This paper compares the resistive switching properties of crystalline and amorphous HfOx thin-film resistive memory devices (RMDs), which were fabricated by physical vapor deposition films using two different O2 partial pressures. The crystallinity of the two HfOx samples was verified by X-ray diffraction (XRD) and transmission electron microscopy (TEM). Ni/HfOx/Cu devices fabricated from both 50 nm thick amorphous and crystalline HfOx films exhibited consistent bipolar switching. Average electroforming voltage for the crystalline and amorphous weare <20 V and <11 V, respectively. Both devices showed similar average set (V set) and reset (Vreset) voltages of -2.25 V and 0.35 V, respectively, independent of electrode size and current compliance. Preliminary endurance data shows that the amorphous device shows the better endurance (14,300 cycles) compared to that of the crystalline device (102,000 cycles), which is at about an order of magnitude higher than the endurance of the crystalline device. Switching uniformity for both devices showeds similar trends with dispersions (standard deviation/mean ratio) of about 30% for V set and Vreset.

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Capulong JO, Briggs BD, Bishop SM, Hovish MQ, Matyi RJ, Cady NC. Effect of crystallinity on endurance and switching behavior of HfO _x-based resistive memory devices. In 2012 IEEE International Integrated Reliability Workshop Final Report, IIRW 2012. 2012. p. 22-25. 6468907. (IEEE International Integrated Reliability Workshop Final Report). doi: 10.1109/IIRW.2012.6468907