Effect of ion mixing on the depth resolution of sputter depth profiling

Yang Tse Cheng; Audrey A. Dow; Bruce M. Clemens

doi:10.1063/1.99977

Effect of ion mixing on the depth resolution of sputter depth profiling

Yang Tse Cheng, Audrey A. Dow, Bruce M. Clemens

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x-ray photoelectron spectroscopy and Ar⁺ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.

Original language	English
Pages (from-to)	1346-1348
Number of pages	3
Journal	Applied Physics Letters
Volume	53
Issue number	14
DOIs	https://doi.org/10.1063/1.99977
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.99977

Cite this

@article{d596b22b56f8455e8896b81a01fce38a,

title = "Effect of ion mixing on the depth resolution of sputter depth profiling",

abstract = "The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x-ray photoelectron spectroscopy and Ar+ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.",

author = "Cheng, {Yang Tse} and Dow, {Audrey A.} and Clemens, {Bruce M.}",

year = "1988",

doi = "10.1063/1.99977",

language = "English",

volume = "53",

pages = "1346--1348",

number = "14",

}

TY - JOUR

T1 - Effect of ion mixing on the depth resolution of sputter depth profiling

AU - Cheng, Yang Tse

AU - Dow, Audrey A.

AU - Clemens, Bruce M.

PY - 1988

Y1 - 1988

N2 - The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x-ray photoelectron spectroscopy and Ar+ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.

AB - The effect of ion mixing on the depth resolution of sputter depth profiling has been studied using x-ray photoelectron spectroscopy and Ar+ sputtering of Pt/Zr, Pt/Mo, Pt/Ti, and Pt/Ni interfaces. It is shown that the heat of mixing of binary alloys plays an important role in depth resolution. The measured interface width of bilayers consisting of metals with a large and negative heat of mixing (Pt/Zr and Pt/Ti) is significantly broader than that of metals with a nearly zero heat of mixing (Pt/Mo and Pt/Ni). This observation suggests that the mechanism of ion mixing during sputter depth profiling with ion energies of a few keV is the same as ion mixing with ion energies of several hundred keV; diffusion in thermal spikes is the dominant contribution to ion mixing in the systems investigated.

UR - http://www.scopus.com/inward/record.url?scp=4243069119&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=4243069119&partnerID=8YFLogxK

U2 - 10.1063/1.99977

DO - 10.1063/1.99977

M3 - Article

AN - SCOPUS:4243069119

SN - 0003-6951

VL - 53

SP - 1346

EP - 1348

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Effect of ion mixing on the depth resolution of sputter depth profiling

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this