Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon

Shibin Li; Zhi Chen

doi:10.1149/1.3372566

Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO₂ on silicon

Shibin Li, Zhi Chen

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report the effects of the thickness variation of the chemical oxide interfacial layer (IL) on the interfacial quality of the HfO₂/Si system in this paper. Metal-oxide-semiconductor capacitors using the HfO ₂/IL gate oxide stack were fabricated using the Ni/Ti metal gate. The capacitance-voltage (C-V) and ellipsometry measurements suggest that the chemical oxide interfacial layer of ∼0.45 nm is the minimum requirement for atomic layer deposition (ALD) growth of high quality HfO₂ on silicon and thicker chemical oxide interfacial layers (>0.45 nm) result in better interfaces for HfO₂ MOS structures with EOTs of < 1 nm.

Original language	English
Title of host publication	Dielectrics for Nanosystems 4
Subtitle of host publication	Materials Science, Processing, Reliability, and Manufacturing
Pages	89-95
Number of pages	7
Edition	2
ISBN (Electronic)	9781607681427
DOIs	https://doi.org/10.1149/1.3372566
State	Published - 2010

Publication series

Name	ECS Transactions
Number	2
Volume	28
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/1.3372566

Cite this

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title = "Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO2 on silicon",

abstract = "We report the effects of the thickness variation of the chemical oxide interfacial layer (IL) on the interfacial quality of the HfO2/Si system in this paper. Metal-oxide-semiconductor capacitors using the HfO 2/IL gate oxide stack were fabricated using the Ni/Ti metal gate. The capacitance-voltage (C-V) and ellipsometry measurements suggest that the chemical oxide interfacial layer of ∼0.45 nm is the minimum requirement for atomic layer deposition (ALD) growth of high quality HfO2 on silicon and thicker chemical oxide interfacial layers (>0.45 nm) result in better interfaces for HfO2 MOS structures with EOTs of < 1 nm.",

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Effect of the chemical oxide layer thickness on the interfacial quality of ALD-grown HfO₂ on silicon. / Li, Shibin; Chen, Zhi.
Dielectrics for Nanosystems 4: Materials Science, Processing, Reliability, and Manufacturing. 2. ed. 2010. p. 89-95 (ECS Transactions; Vol. 28, No. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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