Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors

Yena Seo; Jung Hun Lee; John E. Anthony; Ky V. Nguyen; Yeon Hoo Kim; Ho Won Jang; Sunglim Ko; Younghoon Cho; Wi Hyoung Lee

doi:10.1002/admi.201701399

Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors

Yena Seo
, Jung Hun Lee
, John E. Anthony
, Ky V. Nguyen
, Yeon Hoo Kim
, Ho Won Jang
, Sunglim Ko
, Younghoon Cho
, Wi Hyoung Lee

Research output: Contribution to journal › Article › peer-review

48 Scopus citations

Abstract

In this study, triethylsilylethynyl-anthradithiophene (TES-ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES-ADT field-effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES-ADT solution. Higher mixing time leads to higher grain boundary density, and field-effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field-effect mobility of FETs based on TES-ADT film with higher grain boundary density increase much more upon exposure of NO₂ with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES-ADT sensor are enhanced remarkably by an increase of grain boundary density in TES-ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.

Original language	English
Article number	1701399
Journal	Advanced Materials Interfaces
Volume	5
Issue number	3
DOIs	https://doi.org/10.1002/admi.201701399
State	Published - Feb 8 2018

Bibliographical note

Publisher Copyright:
© 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Funding

This work was supported by grants from the Basic Science Research Program (Code No. 2016R1C1B2013176) and the Center for Advanced Soft Electronics under the Global Frontier Research Program (Code No. 2011-0031628) of the Ministry of Science, ICT and Future Planning, Korea and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry & Energy (MOTIE) of the Republic of Korea (No. 20174030201660).

Funders	Funder number
Basic Science Research Program	2016R1C1B2013176
Center for Advanced Soft Electronics	2011-0031628
Ministry of Trade, Industry and Energy
Ministry of Trade, Industry and Energy	20174030201660
Ministry of Science, ICT and Future Planning
Korea Institute of Energy Technology Evaluation and Planning

Keywords

gas sensors
grain boundary density
organic transistors
soluble acenes
triethylsilylethynyl-anthradithiophene

ASJC Scopus subject areas

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.201701399

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@article{a1802549f1174463aa1ab8d0b85d073d,

title = "Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors",

abstract = "In this study, triethylsilylethynyl-anthradithiophene (TES-ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES-ADT field-effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES-ADT solution. Higher mixing time leads to higher grain boundary density, and field-effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field-effect mobility of FETs based on TES-ADT film with higher grain boundary density increase much more upon exposure of NO2 with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES-ADT sensor are enhanced remarkably by an increase of grain boundary density in TES-ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.",

keywords = "gas sensors, grain boundary density, organic transistors, soluble acenes, triethylsilylethynyl-anthradithiophene",

author = "Yena Seo and Lee, \{Jung Hun\} and Anthony, \{John E.\} and Nguyen, \{Ky V.\} and Kim, \{Yeon Hoo\} and Jang, \{Ho Won\} and Sunglim Ko and Younghoon Cho and Lee, \{Wi Hyoung\}",

note = "Publisher Copyright: {\textcopyright} 2017 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim",

year = "2018",

month = feb,

day = "8",

doi = "10.1002/admi.201701399",

language = "English",

volume = "5",

number = "3",

}

TY - JOUR

T1 - Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors

AU - Seo, Yena

AU - Lee, Jung Hun

AU - Anthony, John E.

AU - Nguyen, Ky V.

AU - Kim, Yeon Hoo

AU - Jang, Ho Won

AU - Ko, Sunglim

AU - Cho, Younghoon

AU - Lee, Wi Hyoung

PY - 2018/2/8

Y1 - 2018/2/8

N2 - In this study, triethylsilylethynyl-anthradithiophene (TES-ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES-ADT field-effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES-ADT solution. Higher mixing time leads to higher grain boundary density, and field-effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field-effect mobility of FETs based on TES-ADT film with higher grain boundary density increase much more upon exposure of NO2 with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES-ADT sensor are enhanced remarkably by an increase of grain boundary density in TES-ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.

AB - In this study, triethylsilylethynyl-anthradithiophene (TES-ADT) films with different density of grain boundaries are used for systematic investigation of effects of grain boundary density on gas sensing properties of TES-ADT field-effect transistors (FETs). Grain boundary density is simply controlled by changing mixing time of TES-ADT solution. Higher mixing time leads to higher grain boundary density, and field-effect mobility decreases with increased grain boundary density. However, gas sensing properties exhibit the opposite behavior. Drain current and field-effect mobility of FETs based on TES-ADT film with higher grain boundary density increase much more upon exposure of NO2 with electron withdrawing character. In addition, dynamic gas sensing tests reveal that response rate and sensitivity of a TES-ADT sensor are enhanced remarkably by an increase of grain boundary density in TES-ADT films. Grain boundaries provide a pathway for diffusion of gas molecules into channel regions and thus increase of grain boundary density is beneficial for development of highly sensitive OFET gas sensors.

KW - gas sensors

KW - grain boundary density

KW - organic transistors

KW - soluble acenes

KW - triethylsilylethynyl-anthradithiophene

UR - https://www.scopus.com/pages/publications/85038629361

UR - https://www.scopus.com/pages/publications/85038629361#tab=citedBy

U2 - 10.1002/admi.201701399

DO - 10.1002/admi.201701399

M3 - Article

AN - SCOPUS:85038629361

VL - 5

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 3

M1 - 1701399

ER -

Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl-Anthradithiophene Field-Effect Transistors

Abstract

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