TY - JOUR
T1 - Efficient near-infrared polymer and organic light-emitting diodes based on electrophosphorescence from (tetraphenyltetranaphtho[2,3]porphyrin)platinum(II)
AU - Sommer, Jonathan R.
AU - Farley, Richard T.
AU - Graham, Kenneth R.
AU - Yang, Yixing
AU - Reynolds, John R.
AU - Xue, Jiangeng
AU - Schanze, Kirk S.
PY - 2009/2/25
Y1 - 2009/2/25
N2 - The new metalloporphyrin Pt(tptnp), where tptnp = tetraphenyltetranaphtho[2,3]porphyrin, has been prepared and subjected to photophysical and electrooptical device studies. In degassed toluene solution at room temperature Pt(tptnp) features efficient phosphorescence emission with λmax 883 nm with a quantum efficiency of 0.22. The complex has been used as the active phosphor in polymer and organic light-emitting diodes. Polymer light-emitting diodes based on a spin-coated emissive layer consisting of a blend of Pt(tptnp) doped in poly(9-vinylcarbazole) and 2-(4-biphenylyl)-5- (4-tert-butylphenyl)-1,3,4-oxadiazole exhibit near-IR emission with λmax 896 nm, with a maximum external quantum efficiency (EQE) of 0.4% and a maximum radiant emittance of 100 μW/cm2. Organic light-emitting diodes prepared via vapor deposition of all layers and that feature an optimized multilayer hole injection and electron blocking layer heterostructure with an emissive layer consisting of 4,4′-bis(carbazol-9- yl)biphenyl (CBP) doped with Pt(tptnp) exhibit a maximum EQE of 3.8% and a maximum radiant emittance of 1.8 mW/cm2. The polymer and organic light-emitting diodes characterized in this study exhibit record high efficiency for devices that emit in the near-IR at λ >800 nm.
AB - The new metalloporphyrin Pt(tptnp), where tptnp = tetraphenyltetranaphtho[2,3]porphyrin, has been prepared and subjected to photophysical and electrooptical device studies. In degassed toluene solution at room temperature Pt(tptnp) features efficient phosphorescence emission with λmax 883 nm with a quantum efficiency of 0.22. The complex has been used as the active phosphor in polymer and organic light-emitting diodes. Polymer light-emitting diodes based on a spin-coated emissive layer consisting of a blend of Pt(tptnp) doped in poly(9-vinylcarbazole) and 2-(4-biphenylyl)-5- (4-tert-butylphenyl)-1,3,4-oxadiazole exhibit near-IR emission with λmax 896 nm, with a maximum external quantum efficiency (EQE) of 0.4% and a maximum radiant emittance of 100 μW/cm2. Organic light-emitting diodes prepared via vapor deposition of all layers and that feature an optimized multilayer hole injection and electron blocking layer heterostructure with an emissive layer consisting of 4,4′-bis(carbazol-9- yl)biphenyl (CBP) doped with Pt(tptnp) exhibit a maximum EQE of 3.8% and a maximum radiant emittance of 1.8 mW/cm2. The polymer and organic light-emitting diodes characterized in this study exhibit record high efficiency for devices that emit in the near-IR at λ >800 nm.
KW - electrophosphorescence
KW - metalloporphyrin
KW - near-infrared
KW - organic light emitting diodes
KW - polymer light emitting diodes
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U2 - 10.1021/am800236x
DO - 10.1021/am800236x
M3 - Article
C2 - 20353214
AN - SCOPUS:67650700214
SN - 1944-8244
VL - 1
SP - 274
EP - 278
JO - ACS Applied Materials and Interfaces
JF - ACS Applied Materials and Interfaces
IS - 2
ER -