Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Yonghui Lee; Seunghwan Lee; Gabseok Seo; Sanghyun Paek; Kyung Taek Cho; Aron J. Huckaba; Marco Calizzi; Dong won Choi; Jin Seong Park; Dongwook Lee; Hyo Joong Lee; Abdullah M. Asiri; Mohammad Khaja Nazeeruddin

doi:10.1002/advs.201800130

Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Yonghui Lee, Seunghwan Lee, Gabseok Seo, Sanghyun Paek, Kyung Taek Cho, Aron J. Huckaba, Marco Calizzi, Dong won Choi, Jin Seong Park, Dongwook Lee, Hyo Joong Lee, Abdullah M. Asiri, Mohammad Khaja Nazeeruddin

Research output: Contribution to journal › Article › peer-review

99 Scopus citations

Abstract

Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO₂ electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO₂ layer and its influence on the device performance are investigated. It is found that surface passivation of SnO₂ is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

Original language	English
Article number	1800130
Journal	Advanced Science
Volume	5
Issue number	6
DOIs	https://doi.org/10.1002/advs.201800130
State	Published - Jun 2018

Bibliographical note

Funding Information:
The authors acknowledge SNSF NRP 70 project; number: 407040_154056 and CTI 15864.2 PFNM-NM, Solaronix, Aubonne, Switzerland. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2017R1D1A1B03034035). H.J.L. acknowledges the financial support by the National Research Foundation (NRF-2017R1D1A1B03028570). The authors thank the Borun New Material Technology for providing high quality Spiro-OMeTAD.

Publisher Copyright:
© 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Keywords

SnO electron transporting layers
atomic layer deposition
passivation
perovskites
planar perovskite solar cells

ASJC Scopus subject areas

Medicine (miscellaneous)
Chemical Engineering (all)
Materials Science (all)
Biochemistry, Genetics and Molecular Biology (miscellaneous)
Engineering (all)
Physics and Astronomy (all)

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title = "Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer",

abstract = "Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.",

keywords = "SnO electron transporting layers, atomic layer deposition, passivation, perovskites, planar perovskite solar cells",

author = "Yonghui Lee and Seunghwan Lee and Gabseok Seo and Sanghyun Paek and Cho, {Kyung Taek} and Huckaba, {Aron J.} and Marco Calizzi and Choi, {Dong won} and Park, {Jin Seong} and Dongwook Lee and Lee, {Hyo Joong} and Asiri, {Abdullah M.} and Nazeeruddin, {Mohammad Khaja}",

note = "Funding Information: The authors acknowledge SNSF NRP 70 project; number: 407040_154056 and CTI 15864.2 PFNM-NM, Solaronix, Aubonne, Switzerland. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2017R1D1A1B03034035). H.J.L. acknowledges the financial support by the National Research Foundation (NRF-2017R1D1A1B03028570). The authors thank the Borun New Material Technology for providing high quality Spiro-OMeTAD. Publisher Copyright: {\textcopyright} 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim",

year = "2018",

month = jun,

doi = "10.1002/advs.201800130",

language = "English",

volume = "5",

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AU - Lee, Yonghui

AU - Lee, Seunghwan

AU - Seo, Gabseok

AU - Paek, Sanghyun

AU - Cho, Kyung Taek

AU - Huckaba, Aron J.

AU - Calizzi, Marco

AU - Choi, Dong won

AU - Park, Jin Seong

AU - Lee, Dongwook

AU - Lee, Hyo Joong

AU - Asiri, Abdullah M.

AU - Nazeeruddin, Mohammad Khaja

N1 - Funding Information: The authors acknowledge SNSF NRP 70 project; number: 407040_154056 and CTI 15864.2 PFNM-NM, Solaronix, Aubonne, Switzerland. This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (NRF-2017R1D1A1B03034035). H.J.L. acknowledges the financial support by the National Research Foundation (NRF-2017R1D1A1B03028570). The authors thank the Borun New Material Technology for providing high quality Spiro-OMeTAD. Publisher Copyright: © 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

PY - 2018/6

Y1 - 2018/6

N2 - Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

AB - Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.

KW - SnO electron transporting layers

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KW - perovskites

KW - planar perovskite solar cells

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Efficient Planar Perovskite Solar Cells Using Passivated Tin Oxide as an Electron Transport Layer

Abstract

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Keywords

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