Abstract
Planar perovskite solar cells using low-temperature atomic layer deposition (ALD) of the SnO2 electron transporting layer (ETL), with excellent electron extraction and hole-blocking ability, offer significant advantages compared with high-temperature deposition methods. The optical, chemical, and electrical properties of the ALD SnO2 layer and its influence on the device performance are investigated. It is found that surface passivation of SnO2 is essential to reduce charge recombination at the perovskite and ETL interface and show that the fabricated planar perovskite solar cells exhibit high reproducibility, stability, and power conversion efficiency of 20%.
Original language | English |
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Article number | 1800130 |
Journal | Advanced Science |
Volume | 5 |
Issue number | 6 |
DOIs | |
State | Published - Jun 2018 |
Bibliographical note
Publisher Copyright:© 2018 The Authors. Published by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Keywords
- SnO electron transporting layers
- atomic layer deposition
- passivation
- perovskites
- planar perovskite solar cells
ASJC Scopus subject areas
- Medicine (miscellaneous)
- General Chemical Engineering
- General Materials Science
- Biochemistry, Genetics and Molecular Biology (miscellaneous)
- General Engineering
- General Physics and Astronomy