Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect

Janet K. Lumpp; Sudhakar Raman

doi:10.1109/3476.681388

Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect

Janet K. Lumpp, Sudhakar Raman

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of x-rays (EDAX) was performed at various points in the cross section to determine the elements present.

Original language	English
Pages (from-to)	118-125
Number of pages	8
Journal	IEEE transactions on components, packaging and manufacturing technology. Part C. Manufacturing
Volume	21
Issue number	2
DOIs	https://doi.org/10.1109/3476.681388
State	Published - 1998

Bibliographical note

Funding Information:
Manuscript received April 20, 1995; revised February 24, 1998. This work was supported by NSF Grant ECS-9410224. J. K. Lumpp is with the Department of Electrical Engineering, University of Kentucky, Lexington, KY 40505-0046 USA (email: [email protected]). S. Raman is with Electro Scientific Industries, Inc., Portland, OR 97229-5497 USA (email: [email protected]). Publisher Item Identifier S 1083-4400(98)04211-9.

ASJC Scopus subject areas

General Engineering

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10.1109/3476.681388

Cite this

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title = "Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect",

abstract = "The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of x-rays (EDAX) was performed at various points in the cross section to determine the elements present.",

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note = "Funding Information: Manuscript received April 20, 1995; revised February 24, 1998. This work was supported by NSF Grant ECS-9410224. J. K. Lumpp is with the Department of Electrical Engineering, University of Kentucky, Lexington, KY 40505-0046 USA (email: [email protected]). S. Raman is with Electro Scientific Industries, Inc., Portland, OR 97229-5497 USA (email: [email protected]). Publisher Item Identifier S 1083-4400(98)04211-9.",

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AU - Raman, Sudhakar

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N2 - The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of x-rays (EDAX) was performed at various points in the cross section to determine the elements present.

AB - The objective of this work was to develop a procedure to ensure good electrical interconnection between the thick film conductor pads and the metal coated walls of via holes. The via metallization technique involves excimer laser ablation of aluminum nitride (AlN) substrate and either an aluminum or copper metal sheet adhesively attached to the substrate. Ablated metal from the attached metal sheet deposits on the interior walls of the laser machined via making a conductive pathway through the via. Resistance was measured for vias processed in several different atmospheres, and the cross-sections of the vias were analyzed using scanning electron microscopy (SEM). Energy dispersive analysis of x-rays (EDAX) was performed at various points in the cross section to determine the elements present.

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Electrical characterization of laser machined and metallized vias in AlN with thick film interconnect

Abstract

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