TY - JOUR
T1 - Electrical Control of Structural and Physical Properties via Strong Spin-Orbit Interactions in Sr2IrO4
AU - Cao, G.
AU - Terzic, J.
AU - Zhao, H. D.
AU - Zheng, H.
AU - De Long, L. E.
AU - Riseborough, Peter S.
N1 - Publisher Copyright:
© 2018 American Physical Society.
PY - 2018/1/4
Y1 - 2018/1/4
N2 - Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We demonstrate that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic Mott state is sufficient to attain that goal. The antiferromagnetic insulator Sr2IrO4 provides a model system in which strong SOI lock canted Ir magnetic moments to IrO6 octahedra, causing them to rigidly rotate together. A novel coupling between an applied electrical current and the canting angle reduces the Néel temperature and drives a large, nonlinear lattice expansion that closely tracks the magnetization, increases the electron mobility, and precipitates a unique resistive switching effect. Our observations open new avenues for understanding fundamental physics driven by strong SOI in condensed matter, and provide a new paradigm for functional materials and devices.
AB - Electrical control of structural and physical properties is a long-sought, but elusive goal of contemporary science and technology. We demonstrate that a combination of strong spin-orbit interactions (SOI) and a canted antiferromagnetic Mott state is sufficient to attain that goal. The antiferromagnetic insulator Sr2IrO4 provides a model system in which strong SOI lock canted Ir magnetic moments to IrO6 octahedra, causing them to rigidly rotate together. A novel coupling between an applied electrical current and the canting angle reduces the Néel temperature and drives a large, nonlinear lattice expansion that closely tracks the magnetization, increases the electron mobility, and precipitates a unique resistive switching effect. Our observations open new avenues for understanding fundamental physics driven by strong SOI in condensed matter, and provide a new paradigm for functional materials and devices.
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U2 - 10.1103/PhysRevLett.120.017201
DO - 10.1103/PhysRevLett.120.017201
M3 - Article
C2 - 29350946
AN - SCOPUS:85040131010
SN - 0031-9007
VL - 120
JO - Physical Review Letters
JF - Physical Review Letters
IS - 1
M1 - 017201
ER -