Electro-optic measurement of carrier mobility in an organic thin-film transistor

E. G. Bittle, J. W. Brill, J. E. Anthony

Research output: Contribution to journalArticlepeer-review

11 Scopus citations


We have used an electro-optic technique to measure the position-dependent infrared absorption of holes injected into a thin crystal of the organic semiconductor, 6,13-bis(triisopropylsilylethynyl)-pentacene incorporated in a field-effect transistor. By applying square-wave voltages of variable frequency to the gate or drain, one can measure the time it takes for charges to accumulate on the surface, and therefore, determine their mobility.

Original languageEnglish
Article number013302
JournalApplied Physics Letters
Issue number1
StatePublished - Jul 5 2010

Bibliographical note

Funding Information:
We thank K.-W. Ng and J. P. Straley for helpful discussions. This work was supported by the National Science Foundation, Grant Nos. DMR-0800367, CHE-0749473, and EPS-0814194.

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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